C3M0032120K

Wolfspeed
941-C3M0032120K
C3M0032120K

Mfr.:

Description:
SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET

Datasheet:
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Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
1 Channel
1.2 kV
63 A
32 mOhms
- 4 V, + 15 V
3.6 V
118 nC
- 40 C
+ 175 C
283 W
Enhancement
Brand: Wolfspeed
Configuration: Single
Fall Time: 9 ns
Forward Transconductance - Min: 27 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 18 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 25 ns
Unit Weight: 6 g
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

1200V Silicon Carbide Schottky Diodes

Wolfspeed 1200V Silicon Carbide Schottky Diodes feature Merged PiN Schottky (MPS) technology and offer greater robustness and reliability than standard Schottky diodes. These Wolfspeed 1200V diodes come in various packages that can be paralleled without the risk of thermal runaway. The diodes are ideal for solar inverters, switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and AC/DC converters.

1200V Silicon Carbide Power MOSFETs

Wolfspeed 1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness, and ease of design. These Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, significantly improving system efficiency, power density, and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes offer higher efficiency in demanding environments and are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. The MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density. The 1200V SiC Schottky diodes feature the merged PiN Schottky (MPS) design technology, which is more robust and reliable than typical Schottky barrier diodes. The diodes offer high surge current capability, high-frequency operation, easy parallel operation, and reduced heat sink requirements. The MOSFETs and diodes are ideal for uninterruptible power supplies (UPS), motor control and drives, switched-mode power supplies (SMPS), electric vehicle charging, and high-voltage DC/DC converters.

SiC C3M MOSFETs

Wolfspeed SiC C3M MOSFETs enable higher switching frequencies and reduce inductor, capacitor, filter, and transformer component sizes. The Wolfspeed SiC C3M MOSFETs have higher system efficiency and reduced cooling requirements. The MOSFETs also increase power density and system switching frequency.

In Stock: 620

Stock:
620 Can Ship Immediately
Factory Lead-Time:
13 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥2,355.3 ¥2,355
¥1,318.8 ¥13,188
¥1,262.4 ¥151,488

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