DIW120SIC022-AQ

Diotec Semiconductor
637-DIW120SIC022-AQ
DIW120SIC022-AQ

Mfr.:

Description:
SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive

Datasheet:
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Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
1 Channel
1.2 kV
120 A
22.3 mOhms
- 4 V, + 18 V
4 V
269 nC
- 55 C
+ 175 C
340 W
Enhancement
DIW120SIC022-AQ
Brand: Diotec Semiconductor
Configuration: Single
Fall Time: 35 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 38 ns
Series: SIC120
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 108 ns
Typical Turn-On Delay Time: 150 ns
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Datasheet

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Compliance Codes
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TO-247-3L/4L Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs are ideally suited for high voltage and high frequency switching used in charging systems for electric vehicles (EV), solar inverters, or telecom power supplies. These MOSFETs feature a high 1200V and 650V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies. These MOSFETs are used in DC-DC converters, DC drives, inverters, charging stations, Power Factor Correction (PFC), solar inverters, and power supplies.

In Stock: 448

Stock:
448 Can Ship Immediately
Factory Lead-Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:
This Product Ships FREE

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥12,000.7 ¥12,001
¥10,432.7 ¥104,327
¥8,084.1 ¥970,092
510 Quote

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