GCMX020B120S1-E1

Name: SemiQ GCMX020B120S1-E1
Brand: SemiQ
SKU: 148-GCMX020B120S1-E1
Price: 6806 JPY
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser #:

148-GCMX020B120S1-E1

Mfr. #:

GCMX020B120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 20mohm MOSFET SOT-227

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about SemiQ GCMX020B120S1-E1

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package / Case:	SOT-227-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	113 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	395 W
Series:	GCMX
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Fall Time:	18 ns
Product Type:	MOSFET Modules
Rise Time:	8 ns
Factory Pack Quantity:	30
Subcategory:	Discrete and Power Modules
Type:	SiC MOSFET Power Module
Typical Turn-Off Delay Time:	42 ns
Typical Turn-On Delay Time:	21 ns
Vf - Forward Voltage:	3.7 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Compliance Codes

USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.