GP2T040A120J

Name: SemiQ GP2T040A120J
Brand: SemiQ
SKU: 148-GP2T040A120J
Price: 2119 JPY
Availability: InStock

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Mouser #:

148-GP2T040A120J

Mfr. #:

GP2T040A120J

Mfr.:

SemiQ

Description:

SiC MOSFETs 1200V, 40mOhm, TO-263-7L MOSFET

Datasheet:

GP2T040A120J Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package / Case:	TO-263-7
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	66 A
Rds On - Drain-Source Resistance:	38 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	112 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	357 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	16 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	5 ns
Series:	GP2T020A120
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

GP2T040A120J Datasheet (PDF)

Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GP2T040A120x SiC MOSFETs

SemiQ GP2T040A120x SiC MOSFETs benefit many applications, including Power Factor Correction, DC-DC Converter Primary Switching, and Synchronous rectification. The GP2T040A120x when combined with Silicon Carbide Schottky diodes offers optimal performance that can be achieved without the trade-offs made with Silicon devices. EV Charging, Solar/Wind, Industrial Controls, and HVAC systems benefit from the increased performance achieved with SemiQ SiC MOSFETs.