IKW20N65ET7XKSA1

Infineon Technologies
726-IKW20N65ET7XKSA1
IKW20N65ET7XKSA1

Mfr.:

Description:
IGBTs 650 V, 20 A IGBT with anti-parallel diode in TO-247 package

Datasheet:
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Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.35 V
- 20 V, 20 V
40 A
136 W
- 40 C
+ 175 C
IGBT7 T7
Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: IKW20N65ET7 SP005348286
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

Low Loss Duopack IGBTs

Infineon Technologies Low Loss Duopack IGBTs offer a robust humidity design with Trenchstop™ and Fieldstop™ technology. They feature a very soft, fast-recovery anti-parallel diode, short tail current, and very low VCEsat.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

In Stock: 470

Stock:
470 Can Ship Immediately
Factory Lead-Time:
36 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥704.3 ¥704
¥430.2 ¥4,302
¥332.2 ¥33,220
¥277.4 ¥133,152
¥255.8 ¥306,960

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