IS42S32160F-6BLI

ISSI
870-IS42S32160F-6BLI
IS42S32160F-6BLI

Mfr.:

Description:
DRAM SDRAM,512M,3.3V,RoHs 166MHz,16Mx32, IT

Datasheet:
ECAD Model:
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Learn more about ISSI IS42S32160F-6BLI

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
SDRAM
512 Mbit
32 bit
167 MHz
BGA-90
16 M x 32
6 ns
3 V
3.6 V
- 40 C
+ 85 C
IS42S32160F
Tray
Brand: ISSI
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 240
Subcategory: Memory & Data Storage
Supply Current - Max: 245 mA
Unit Weight: 203 mg
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Compliance Codes
JPHTS:
854232021
CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320028
KRHTS:
8542321010
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.

In Stock: 13

Stock:
13
Can Ship Immediately
On Order:
8,400
Factory Lead-Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥3,755.5 ¥3,756
¥3,479.8 ¥34,798
¥3,370.2 ¥84,255
¥3,287.1 ¥164,355
¥3,164.2 ¥316,420

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