IS42S32200N-6TLI

ISSI
870-IS42S32200N-6TLI
IS42S32200N-6TLI

Mfr.:

Description:
DRAM 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT

Datasheet:
ECAD Model:
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Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
32 bit
166 MHz
TSOP-II-86
2 M x 32
5.4 ns
3 V
3.6 V
- 40 C
+ 85 C
Brand: ISSI
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 70 mA
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.

In Stock: 3,813

Stock:
3,813
Can Ship Immediately
On Order:
41,796
Factory Lead-Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥1,578 ¥1,578
¥1,468.3 ¥14,683
¥1,423.5 ¥35,588
¥1,388.6 ¥69,430
¥1,355.4 ¥146,383

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