SCTW40N120G2VAG

STMicroelectronics
511-SCTW40N120G2VAG
SCTW40N120G2VAG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
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Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-3
1 Channel
1.2 kV
36 A
100 mOhms
- 10 V, + 22 V
4.9 V
61 nC
- 55 C
+ 200 C
278 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Packaging: Tube
Product Type: SiC MOSFETS
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Polarity: N-Channel
Unit Weight: 4.500 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Italy
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

In Stock: 9

Stock:
9
Can Ship Immediately
On Order:
600
Expected 5/14/2027
Factory Lead-Time:
25
Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 609 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥3,350.2 ¥3,350
¥1,793.9 ¥17,939

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