UF3C065080T3S

onsemi
431-UF3C065080T3S
UF3C065080T3S

Mfr.:

Description:
SiC MOSFETs 650V/80MOSICFETG3TO220-3

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about onsemi UF3C065080T3S

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
31 A
100 mOhms
- 25 V, + 25 V
4 V
51 nC
- 55 C
+ 175 C
190 W
Enhancement
AEC-Q101
SiC FET
Brand: onsemi
Configuration: Single
Fall Time: 11 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 13 ns
Series: UF3C
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 59 ns
Typical Turn-On Delay Time: 18 ns
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Models

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Philippines
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

In Stock: 507

Stock:
507 Can Ship Immediately
Factory Lead-Time:
33 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 50
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥1,898.5 ¥1,899
¥1,083 ¥10,830

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.