UF3SC120009K4S

onsemi
431-UF3SC120009K4S
UF3SC120009K4S

Mfr.:

Description:
SiC MOSFETs 1200V/9MOSICFETG3TO247-4

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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Learn more about onsemi UF3SC120009K4S

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
1 Channel
1.2 kV
120 A
11 mOhms
- 20 V, + 20 V
4 V
234 nC
- 55 C
+ 175 C
789 W
Enhancement
AEC-Q101
SiC FET
Brand: onsemi
Configuration: Single
Packaging: Tube
Product Type: SiC MOSFETS
Series: UF3SC
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Polarity: N-Channel
Unit Weight: 6 g
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Philippines
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low RDS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.

In Stock: 358

Stock:
358 Can Ship Immediately
Factory Lead-Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 358 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:
This Product Ships FREE

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥11,866.2 ¥11,866
¥9,363.1 ¥1,123,572

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