VS-4C16ET07T-M3

Vishay Semiconductors
78-VS-4C16ET07T-M3
VS-4C16ET07T-M3

Mfr.:

Description:
SiC Schottky Diodes SicG4TO-2202L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Vishay Semiconductors VS-4C16ET07T-M3

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220AC-2
Single
16 A
650 V
1.3 V
101 A
94 uA
- 55 C
+ 175 C
VS-4C16ET07T-M3
Tube
Brand: Vishay Semiconductors
Pd - Power Dissipation: 103 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
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Attributes selected: 0

Datasheet

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Compliance Codes
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Hong Kong
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
950
Expected 1/11/2027
Factory Lead-Time:
23
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥808.9 ¥809
¥529.9 ¥5,299
¥395.3 ¥39,530
¥343.8 ¥171,900
¥290.7 ¥290,700

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