IXT 200V X4 Ultra Junction Power MOSFETs

IXYS IXT 200V X4 Ultra Junction Power MOSFETs are N-channel enhancement-mode devices with either 10.6mΩ, 13mΩ, or 21mΩ RDS(on) and a 200V maximum drain-source voltage. The IXT MOSFETs are available in TO-220, TO-247, TO-263, or TO-268 standard package style that is avalanche-rated with high-power density. The IXYS IXT 200V X4 Ultra Junction Power MOSFETs are ideal for use in switch-mode and resonant-mode power supplies.

Results: 9
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Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs TO263 200V 86A N-CH X4CLASS
Datasheet
2,004In Stock
¥2,639.3
¥1,524.8
¥1,465
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 86 A 13 mOhms 20 V 4.5 V 70 nC - 55 C + 175 C 300 W Enhancement Tube
IXYS MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET
Datasheet
268In Stock
¥2,225.7
¥1,264
¥1,174.3
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET
Datasheet
354In Stock
¥2,584.5
¥1,460
¥1,425.1
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFETs TO220 200V 94A N-CH X4CLASS
Datasheet
719In Stock
¥2,808.8
¥1,632.8
¥1,631.1
¥1,587.9
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET
Datasheet
499In Stock
¥2,350.3
¥1,342.1
¥1,260.7
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFETs TO247 200V 220A N-CH X4CLASS
Datasheet
1,208In Stock
¥4,062.8
¥2,393.5
¥2,365.3
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 220 A 5.5 mOhms 20 V 4.5 V 157 nC - 55 C + 175 C 800 W Enhancement Tube
IXYS MOSFETs TO263 200V 94A N-CH X4CLASS
Datasheet
620On Order
¥2,948.3
¥1,953.3
¥1,587.9
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFETs TO247 200V 94A N-CH X4CLASS
Datasheet
Non-Stocked Lead-Time 30 Weeks
¥2,870.2
¥1,632.8
¥1,521.5
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFETs TO220 200V 86A N-CH X4CLASS
Datasheet
Non-Stocked Lead-Time 36 Weeks
¥2,782.2
¥1,616.2
¥1,503.2
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 86 A 13 mOhms 20 V 4.5 V 70 nC - 55 C + 175 C 300 W Enhancement Tube