It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMS008C120S1-E1

Name: SemiQ GCMS008C120S1-E1
Brand: SemiQ
SKU: 148-GCMS008C120S1-E1
Price: 8947 JPY
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser #:

148-GCMS008C120S1-E1

Mfr. #:

GCMS008C120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMS008C120S1-E1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about SemiQ GCMS008C120S1-E1

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package / Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	189 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	536 W
Series:	GCMS
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Fall Time:	34 ns
Height:	12.19 mm
If - Forward Current:	176 A
Length:	38.1 mm
Product:	Power Modules
Product Type:	MOSFET Modules
Rise Time:	35 ns
Factory Pack Quantity:	30
Subcategory:	Discrete and Power Modules
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	91 ns
Typical Turn-On Delay Time:	37 ns
Vf - Forward Voltage:	2.03 V
Width:	25.3 mm

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMS008C120S1-E1 Datasheet (PDF)

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GEN3 1200V SiC MOSFET Power Modules

SemiQ GEN3 1200V SiC MOSFET Power Modules with an isolated backplate are based on third-generation SiC technology and tested at over 1400V. These come in two versions, the GCMX series and the GCMS series. Both of these highly rugged and easy-mount devices provide smaller die sizes, faster switching speeds, and reduced losses. The lineup includes an overall drain-source on-resistance [R_DS(on)] range from 8.4mΩ to 80mΩ with a switching time as low as 67ns. The COPACK MOSFETs (GCMS) with a Schottky barrier diode offer exceptional switching losses at a high junction temperature due to the low turn-on switching losses. The SemiQ GEN3 1200V SiC MOSFET Power Modules feature a continuous operational and storage temperature of -55°C to +175°C. Target applications include solar inverters, energy storage systems (ESS), battery charging, and server power supplies.