BM3G005MUV-LBE2

Name: ROHM Semiconductor BM3G005MUV-LBE2
Brand: ROHM Semiconductor
SKU: 755-BM3G005MUV-LBE2
Price: 2423 JPY
Availability: LimitedAvailability

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Mouser #:

755-BM3G005MUV-LBE2

Mfr. #:

BM3G005MUV-LBE2

Mfr.:

ROHM Semiconductor

Description:

GaN FETs PMIC Power Switch/Driver, 650V, 5mO, Low Side Nch

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

BM3G005MUV-LBE2 Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	VQFN-46
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	68.8 A
Rds On - Drain-Source Resistance:	70 mOhms
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Channel Mode:	Enhancement
Tradename:	Nano Cap; EcoGaN
Maximum Operating Frequency:	2 MHz
Technology:	Si
Brand:	ROHM Semiconductor
Fall Time:	2.7 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	GaN HEMT Power Stage
Product Type:	GaN FETs
Rise Time:	5 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

BM3G005MUV-LBE2 Datasheet

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Compliance Codes

USHTS:: 8542390070
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Nano Cap™ 650V GaN HEMT Power Stage ICs

ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs are designed for demanding electronics systems. These ICs boast a blend of high power density and efficiency. The devices integrate a 650V enhancement GaN HEMT and a silicon driver. ROHM Semiconductor Nano Cap 650V GaN HEMT Power Stage ICs are ideal for applications that include industrial equipment, power supplies, bridge topology, and adapters.