|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
¥1,787.2
-
422在庫
-
NRND
|
Mouser 部品番号
726-IMW65R048M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
422在庫
|
|
|
¥1,787.2
|
|
|
¥1,058.1
|
|
|
¥892
|
|
|
¥769
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R039M1HXKSA1
- Infineon Technologies
-
1:
¥1,551.4
-
335在庫
-
NRND
|
Mouser 部品番号
726-IMZA65R039M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
335在庫
|
|
|
¥1,551.4
|
|
|
¥1,083
|
|
|
¥1,014.9
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
50 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
¥3,026.3
-
643在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R022M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
643在庫
|
|
|
¥3,026.3
|
|
|
¥1,868.6
|
|
|
¥1,800.5
|
|
|
¥1,769
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
64 A
|
30 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
67 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
¥1,099.6
-
437在庫
-
製造中止
|
Mouser 部品番号
726-IMZA65R107M1HXKS
製造中止
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
437在庫
|
|
|
¥1,099.6
|
|
|
¥704.3
|
|
|
¥667.7
|
|
|
¥666.1
|
|
|
¥619.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R072M1HXTMA1
- Infineon Technologies
-
1:
¥1,362
-
861在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R072M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
861在庫
|
|
|
¥1,362
|
|
|
¥775.7
|
|
|
¥714.2
|
|
|
¥697.6
|
|
|
¥662.7
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
33 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
140 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R048M1HXTMA1
- Infineon Technologies
-
1:
¥1,666
-
1,019在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R048M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,019在庫
|
|
|
¥1,666
|
|
|
¥931.8
|
|
|
¥873.7
|
|
|
¥848.8
|
|
|
¥827.2
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
45 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 175 C
|
183 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
¥1,224.2
-
753在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R107M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
753在庫
|
|
|
¥1,224.2
|
|
|
¥656.1
|
|
|
¥601.3
|
|
|
¥571.4
|
|
|
¥539.8
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
24 A
|
141 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
35 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R072M1HXKSA1
- Infineon Technologies
-
1:
¥1,373.6
-
434在庫
-
NRND
|
Mouser 部品番号
726-IMW65R072M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
434在庫
|
|
|
¥1,373.6
|
|
|
¥853.8
|
|
|
¥719.2
|
|
|
¥679.3
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
26 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R027M1HXKSA1
- Infineon Technologies
-
1:
¥2,611.1
-
1,469在庫
-
NRND
|
Mouser 部品番号
726-IMZA65R027M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,469在庫
|
|
|
¥2,611.1
|
|
|
¥1,619.5
|
|
|
¥1,484.9
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
59 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R260M1HXTMA1
- Infineon Technologies
-
1:
¥848.8
-
667在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R260M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
667在庫
|
|
|
¥848.8
|
|
|
¥440.2
|
|
|
¥400.3
|
|
|
¥350.5
|
|
|
¥330.5
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
6 A
|
346 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R030M1HXKSA1
- Infineon Technologies
-
1:
¥2,406.8
-
480在庫
-
NRND
|
Mouser 部品番号
726-IMW65R030M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
480在庫
|
|
|
¥2,406.8
|
|
|
¥1,463.3
|
|
|
¥1,298.9
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
58 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R107M1HXKSA1
- Infineon Technologies
-
1:
¥1,307.2
-
473在庫
-
NRND
|
Mouser 部品番号
726-IMW65R107M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
473在庫
|
|
|
¥1,307.2
|
|
|
¥873.7
|
|
|
¥702.6
|
|
|
¥624.5
|
|
|
¥501.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
¥1,847
-
323在庫
-
NRND
|
Mouser 部品番号
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
323在庫
|
|
|
¥1,847
|
|
|
¥1,305.5
|
|
|
¥1,088
|
|
|
¥968.4
|
|
|
¥822.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R057M1HXKSA1
- Infineon Technologies
-
1:
¥1,599.5
-
132在庫
-
NRND
|
Mouser 部品番号
726-IMZA65R057M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
132在庫
|
|
|
¥1,599.5
|
|
|
¥973.3
|
|
|
¥955.1
|
|
|
¥795.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
¥2,511.4
-
71在庫
-
1,680取寄中
-
NRND
|
Mouser 部品番号
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
71在庫
1,680取寄中
取寄中:
960 予想2026/08/25
720 予想2026/09/14
|
|
|
¥2,511.4
|
|
|
¥1,579.6
|
|
|
¥1,423.5
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R057M1HXKSA1
- Infineon Technologies
-
1:
¥1,405.2
-
55在庫
-
NRND
|
Mouser 部品番号
726-IMW65R057M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
55在庫
|
|
|
¥1,405.2
|
|
|
¥968.4
|
|
|
¥803.9
|
|
|
¥782.3
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R083M1HXKSA1
- Infineon Technologies
-
1:
¥1,382
-
2在庫
-
480予想2026/09/14
-
NRND
|
Mouser 部品番号
726-IMW65R083M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
2在庫
480予想2026/09/14
|
|
|
¥1,382
|
|
|
¥838.8
|
|
|
¥715.9
|
|
|
¥634.5
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
24 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
19 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
¥1,611.2
-
1,995取寄中
-
NRND
|
Mouser 部品番号
726-IMBG65R057M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,995取寄中
取寄中:
1,000 予想2026/09/10
995 予想2026/09/14
|
|
|
¥1,611.2
|
|
|
¥908.6
|
|
|
¥790.6
|
|
|
¥747.5
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
39 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
161 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R163M1HXTMA1
- Infineon Technologies
-
1:
¥1,039.8
-
1,000予想2026/09/24
-
NRND
|
Mouser 部品番号
726-IMBG65R163M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,000予想2026/09/24
|
|
|
¥1,039.8
|
|
|
¥546.5
|
|
|
¥498.3
|
|
|
¥430.2
|
|
|
¥402
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
17 A
|
217 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
27 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R039M1HXKSA1
- Infineon Technologies
-
1:
¥1,955
-
2,160在庫
-
NRND
|
Mouser 部品番号
726-IMW65R039M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
2,160在庫
|
|
|
¥1,955
|
|
|
¥1,413.5
|
|
|
¥1,177.6
|
|
|
¥1,049.8
|
|
|
¥892
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
46 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R030M1HXKSA1
- Infineon Technologies
-
1:
¥2,506.4
-
235在庫
-
NRND
|
Mouser 部品番号
726-IMZA65R030M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
235在庫
|
|
|
¥2,506.4
|
|
|
¥1,908.5
|
|
|
¥1,591.2
|
|
|
¥1,416.8
|
|
|
¥1,202.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
53 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R030M1HXTMA1
- Infineon Technologies
-
1,000:
¥1,230.8
-
非在庫リードタイム 52 週間
-
NRND
|
Mouser 部品番号
726-IMBG65R030M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
非在庫リードタイム 52 週間
|
|
最低： 1,000
複数： 1,000
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
63 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R039M1HXTMA1
- Infineon Technologies
-
1,000:
¥960.1
-
非在庫リードタイム 52 週間
-
NRND
|
Mouser 部品番号
726-IMBG65R039M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
非在庫リードタイム 52 週間
|
|
最低： 1,000
複数： 1,000
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
54 A
|
51 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R083M1HXTMA1
- Infineon Technologies
-
1,000:
¥604.6
-
非在庫リードタイム 52 週間
-
NRND
|
Mouser 部品番号
726-IMBG65R083M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
非在庫リードタイム 52 週間
|
|
最低： 1,000
複数： 1,000
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
28 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
44 nC
|
- 55 C
|
+ 175 C
|
126 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
¥1,576.3
-
非在庫リードタイム 52 週間
-
NRND
|
Mouser 部品番号
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
非在庫リードタイム 52 週間
|
|
|
¥1,576.3
|
|
|
¥1,109.5
|
|
|
¥784
|
|
|
¥714.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
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