|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥3,023
-
2,309在庫
|
Mouser 部品番号
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,309在庫
|
|
|
¥3,023
|
|
|
¥1,867
|
|
|
¥1,767.3
|
|
|
¥1,767.3
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥3,674.1
-
7在庫
-
600予想2027/02/05
-
新製品
|
Mouser 部品番号
511-SCT019HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
7在庫
600予想2027/02/05
|
|
|
¥3,674.1
|
|
|
¥2,632.7
|
|
|
¥2,317.1
|
|
|
¥2,127.7
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥4,280.4
-
540在庫
|
Mouser 部品番号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
540在庫
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥3,102.7
-
448在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
448在庫
|
|
|
¥3,102.7
|
|
|
¥2,016.5
|
|
|
¥1,876.9
|
|
|
¥1,662.7
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥3,360.2
-
256在庫
-
600予想2027/08/27
|
Mouser 部品番号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
256在庫
600予想2027/08/27
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥3,147.6
-
238在庫
-
600予想2027/03/12
|
Mouser 部品番号
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
238在庫
600予想2027/03/12
|
|
|
¥3,147.6
|
|
|
¥1,958.3
|
|
|
¥1,837.1
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥2,260.6
-
587在庫
-
1,000予想2027/05/21
|
Mouser 部品番号
511-SCT027H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
587在庫
1,000予想2027/05/21
|
|
|
¥2,260.6
|
|
|
¥1,285.6
|
|
|
¥1,282.3
|
|
|
¥1,212.5
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥2,348.7
-
246在庫
|
Mouser 部品番号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
246在庫
|
|
|
¥2,348.7
|
|
|
¥1,573
|
|
|
¥1,458.4
|
|
|
¥1,240.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥1,931.7
-
467在庫
|
Mouser 部品番号
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
467在庫
|
|
|
¥1,931.7
|
|
|
¥1,058.1
|
|
|
¥986.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥2,229.1
-
481在庫
|
Mouser 部品番号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481在庫
|
|
|
¥2,229.1
|
|
|
¥1,488.3
|
|
|
¥1,382
|
|
|
¥1,190.9
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥1,519.8
-
1,404在庫
|
Mouser 部品番号
511-SCT055TO65G3
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,404在庫
|
|
|
¥1,519.8
|
|
|
¥832.2
|
|
|
¥779
|
|
|
¥720.9
|
|
|
¥720.9
|
|
最低： 1
複数： 1
:
1,800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥2,752.3
-
22在庫
-
1,000予想2027/01/29
|
Mouser 部品番号
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
22在庫
1,000予想2027/01/29
|
|
|
¥2,752.3
|
|
|
¥1,654.4
|
|
|
¥1,564.7
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥3,504.7
-
13在庫
-
1,200取寄中
|
Mouser 部品番号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
13在庫
1,200取寄中
取寄中:
600 予想2027/05/07
600 予想2027/06/11
|
|
|
¥3,504.7
|
|
|
¥2,418.4
|
|
|
¥2,207.5
|
|
|
¥2,029.7
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥2,337
-
98在庫
-
600予想2026/09/07
|
Mouser 部品番号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
98在庫
600予想2026/09/07
|
|
|
¥2,337
|
|
|
¥1,592.9
|
|
|
¥1,395.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥2,307.1
-
35在庫
-
600予想2027/05/14
|
Mouser 部品番号
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
35在庫
600予想2027/05/14
|
|
|
¥2,307.1
|
|
|
¥1,621.1
|
|
|
¥1,237.4
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥2,506.4
-
48在庫
-
1,200予想2027/01/29
|
Mouser 部品番号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
48在庫
1,200予想2027/01/29
|
|
|
¥2,506.4
|
|
|
¥1,880.3
|
|
|
¥1,187.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥2,011.5
-
671在庫
|
Mouser 部品番号
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
671在庫
|
|
|
¥2,011.5
|
|
|
¥1,131.1
|
|
|
¥1,101.2
|
|
|
¥1,041.4
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
¥2,842
-
334在庫
|
Mouser 部品番号
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
334在庫
|
|
|
¥2,842
|
|
|
¥2,014.8
|
|
|
¥1,499.9
|
|
|
¥1,345.4
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥5,182.3
-
1,301在庫
|
Mouser 部品番号
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,301在庫
|
|
|
¥5,182.3
|
|
|
¥3,705.7
|
|
|
¥3,509.7
|
|
|
¥3,509.7
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
- STL260N4LF7
- STMicroelectronics
-
1:
¥561.4
-
4,893在庫
|
Mouser 部品番号
511-STL260N4LF7
|
STMicroelectronics
|
MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
|
|
4,893在庫
|
|
|
¥561.4
|
|
|
¥365.4
|
|
|
¥254.1
|
|
|
¥206
|
|
|
¥201
|
|
|
¥187.7
|
|
最低： 1
複数： 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT5x6-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥3,780.4
-
5在庫
-
1,200予想2027/02/19
-
新製品
|
Mouser 部品番号
511-SCT020HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
5在庫
1,200予想2027/02/19
|
|
|
¥3,780.4
|
|
|
¥2,823.7
|
|
|
¥2,441.7
|
|
|
¥2,312.1
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥1,702.5
-
14在庫
-
1,800予想2027/01/29
|
Mouser 部品番号
511-SCT040TO65G3
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
14在庫
1,800予想2027/01/29
|
|
|
¥1,702.5
|
|
|
¥1,199.2
|
|
|
¥890.3
|
|
|
¥830.5
|
|
|
¥830.5
|
|
最低： 1
複数： 1
:
1,800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
¥2,272.2
-
5在庫
-
600予想2027/04/16
|
Mouser 部品番号
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
5在庫
600予想2027/04/16
|
|
|
¥2,272.2
|
|
|
¥1,699.2
|
|
|
¥1,554.7
|
|
|
¥1,347.1
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
¥2,247.3
-
12在庫
|
Mouser 部品番号
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
12在庫
|
|
|
¥2,247.3
|
|
|
¥1,305.5
|
|
|
¥1,217.5
|
|
|
¥1,152.7
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥3,350.2
-
5在庫
-
600予想2027/02/12
|
Mouser 部品番号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
5在庫
600予想2027/02/12
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
