RGT20TM65DGC9

ROHM Semiconductor
755-RGT20TM65DGC9
RGT20TM65DGC9

Mfr.:

Description:
IGBTs 650V 10A IGBT Field Stop Trench

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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More Information
Learn more about ROHM Semiconductor RGT20TM65DGC9

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-220NFM-3
Through Hole
Single
650 V
2.1 V
30 V
10 A
25 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Part # Aliases: RGT20TM65D
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Attributes selected: 0

Datasheet

PCN

Specification Sheets

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Compliance Codes
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

IGBT Intelligent Power Modules

ROHM Semiconductor IGBT Intelligent Power Modules (IPMs) Insulated-Gate Bipolar Transistors (IGBT) optimized for both high-speed and low-speed switching drives. These IPMs are comprised of gate drivers, bootstrap diodes, IGBTs, and flywheel diodes. The modules offer a collector current ranging from 3A to 80A and voltage ranging from 600V to 1800V. The ROHM Semiconductor IGBT IPMs feature 3-phase DC/AC inverter, low side IGBT open-emitter, high side IGBT gate driver, low side IGBT gate driver, and fault signal. Typical applications include low-speed and high-speed switching drives.

In Stock: 918

Stock:
918 Can Ship Immediately
Factory Lead-Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 918 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥639.5 ¥640
¥416.9 ¥4,169
¥292.3 ¥29,230
¥245.8 ¥122,900
1,000 Quote

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