R60xx PrestoMOS™ High-Voltage MOSFETs

ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. These ROHM devices combine high-speed switching with an internal diode and high reverse recovery time (trr) characteristics for optimized efficiency and lower loss while contributing to smaller designs.

Results: 71
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 20A 3rd Gen, Fast Switch 89In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 20 A 196 mOhms - 20 V, 20 V 5 V 40 nC - 55 C + 150 C 68 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 24A 3rd Gen, Low Noise 3In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247G-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 245 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 7A 3rd Gen, Low Noise
2,500Expected 11/5/2026
Min.: 1
Mult.: 1
: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 650 V 7 A 665 mOhms - 20 V, 20 V 4 V 20 nC - 55 C + 150 C 78 W Enhancement Reel, Cut Tape, MouseReel
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 4A 3rd Gen, Fast Recover Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 600 V 4 A 1.43 Ohms - 30 V, 30 V 5 V 10.5 nC - 55 C + 150 C 60 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 6A 3rd Gen, Fast Recover Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 600 V 6 A 936 mOhms - 30 V, 30 V 5 V 15.5 nC - 55 C + 150 C 86 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 7A 3rd Gen, Fast Recover Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 600 V 7 A 780 mOhms - 30 V, 30 V 7 V 17.5 nC - 55 C + 150 C 96 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 15A 3rd Gen, Low Noise Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 15 A 290 mOhms - 20 V, 20 V 4 V 40 nC - 55 C + 150 C 120 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 18A 3rd Gen, Fast Recover Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 600 V 18 A 286 mOhms - 30 V, 30 V 7 V 42 nC - 55 C + 150 C 220 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 20A 3rd Gen, Fast Recover Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 20 A 234 mOhms - 30 V, 30 V 7 V 45 nC - 55 C + 150 C 76 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 20A 3rd Gen, Fast Recover Non-Stocked Lead-Time 20 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 234 mOhms - 30 V, 30 V 7 V 45 nC - 55 C + 150 C 252 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 20A 3rd Gen, Fast Recover Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 20 A 234 mOhms - 30 V, 30 V 7 V 45 nC - 55 C + 150 C 76 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 25A 3rd Gen, Fast Recover Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 25 A 182 mOhms - 30 V, 30 V 7 V 57 nC - 55 C + 150 C 85 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 25A 3rd Gen, Fast Recover Non-Stocked Lead-Time 20 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 182 mOhms - 30 V, 30 V 7 V 57 nC - 55 C + 150 C 306 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFETs 600V Vdss; 95W Pd PrestoMOS; 30A Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 30 A 143 mOhms - 30 V, 30 V 7 V 74 nC + 150 C 95 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 30A 3rd Gen, Fast Recover Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 30 A 143 mOhms - 30 V, 30 V 7 V 74 nC - 55 C + 150 C 93 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 4A 3rd Gen, Fast Switch Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 650 V 4 A 1.05 Ohms - 20 V, 20 V 5 V 10 nC - 55 C + 150 C 58 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 24A 3rd Gen, Low Noise Non-Stocked Lead-Time 18 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 245 W Enhancement Reel
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 24A 3rd Gen, Low Noise Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 74 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 30A 3rd Gen, Low Noise Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 30 A 140 mOhms - 20 V, 20 V 4 V 90 nC - 55 C + 150 C 86 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 30A 3rd Gen, Fast Switch Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247G-3 N-Channel 1 Channel 650 V 30 A 140 mOhms - 20 V, 20 V 5 V 56 nC - 55 C + 150 C 305 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 35A 3rd Gen, Low Noise Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 35 A 115 mOhms - 20 V, 20 V 4 V 110 nC - 55 C + 150 C 102 W Enhancement Tube