SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Results: 31
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 Mfr.
Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
ROHM Semiconductor SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC
Datasheet
321In Stock
900Expected 4/14/2027
¥2,267.3
¥1,406.9
¥1,255.7
¥1,215.9
¥1,182.6
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS
Datasheet
420In Stock
¥1,807.2
¥983.3
¥910.2
¥905.2
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N
Datasheet
3In Stock
¥2,966.5
¥1,888.6
¥1,724.1
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
Datasheet
4,950On Order
¥2,029.7
¥1,142.8
¥1,048.1
¥1,009.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
Datasheet
446Expected 3/3/2027
¥6,974.5
¥5,100.9
¥5,089.3
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N
Datasheet
Non-Stocked Lead-Time 27 Weeks
¥10,444.4
Min.: 450
Mult.: 450
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement AEC-Q101