Power MOSFETs

YAGEO XSemi Power MOSFETs use advanced processing techniques for low on-resistance, efficiency, and cost-effectiveness. YAGEO XSemi Power MOSFETs are available in different packages to fit application needs. Packages available for the device are widely used for commercial and industrial applications.

Results: 79
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 Mfr.
Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
YAGEO XSemi MOSFETs N-CH 100V 48. 5A TO-251
Datasheet
4,000Expected 12/28/2026
¥209.3
¥90
¥80.1
¥65.9
View
Min.: 1
Mult.: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 100 V 48.5 A 11 mOhms 20 V 4 V 35 nC - 55 C + 150 C 1.13 W Enhancement Tube
YAGEO XSemi MOSFETs N-CH 100V 8.1 A TO-252
Datasheet
2,000Expected 3/2/2027
Cut Tape
¥108
¥48.3
¥42.5
¥40.4
Reel
¥24.4
View
MouseReel Available
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT TO-252-3/2 N-Channel 1 Channel 100 V 8.1 A 135 mOhms 20 V 3 V 11 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs P-CH -30V -3. 9A SOT-23S
Datasheet
2,955Expected 10/27/2026
Cut Tape
¥58.1
¥25.2
¥22.1
¥16.3
Reel
¥11.3
View
MouseReel Available
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-23S-3 P-Channel 1 Channel 30 V 3.9 A 55 mOhms 20 V 3 V 6.5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs N-CH 600V 0.0 53A SOT-23
Datasheet
5,993Expected 3/3/2027
Cut Tape
¥74.7
¥33.1
¥28.9
¥21.6
Reel
¥16.1
¥13.8
MouseReel Available
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-23-3 N-Channel 1 Channel 600 V 53 mA 72 Ohms 20 V 2.6 V 2.3 nC - 55 C + 150 C 500 mW Enhancement Reel, Cut Tape, MouseReel