MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Results: 35
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Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

STMicroelectronics MOSFETs N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
Datasheet
325In Stock
600Expected 2/5/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 200 mOhms 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
Datasheet
122In Stock
1,800Expected 1/29/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 130 mOhms 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 packag
Datasheet
5In Stock
2,400Expected 2/19/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 40 A 65 mOhms 25 V 3 V 70 nC - 55 C + 150 C 300 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 packag
Datasheet
32In Stock
1,800Expected 1/29/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 60 mOhms 25 V 3 V 90 nC - 55 C + 150 C 360 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
Datasheet
10In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 28 A 110 mOhms 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
Datasheet
4,990Expected 4/30/2027
MouseReel Available
Min.: 1
Mult.: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 570 mOhms 30 V 3 V 4 nC - 55 C + 150 C 85 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package
Datasheet
3,998On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 130 mOhms 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220 package
Datasheet
999Expected 5/14/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 28 A 110 mOhms 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 125 mOhm typ., 21 A MDmesh DM6 Power MOSFET in PowerFLAT 8x8 HV
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT N-Channel 1 Channel 600 V 21 A 140 mOhms 25 V 3.25 V 35 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel

STMicroelectronics MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 130 mOhms 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube