Japanese Yen Incoterms:DDP with Consumption Tax added at checkout All prices include duty and customs fees. Free shipping on most orders over ¥6,000 (JPY).
US Dollars Incoterms:FCA (Shipping Point) Duty, customs fees and Consumption Tax collected at time of delivery. Free shipping on most orders over $50 (USD).
Images are for reference only See Product Specifications
The link could not be generated at this time. Please try again.
GaN HEMTs
MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.