|
|
MOSFET Transistor, MOSFET Nch, 100V(Vdss), 6.0A(Id), (4.5V Drive)
- RF4P060BGTCR
- ROHM Semiconductor
-
1:
¥201
-
8,274在庫
|
Mouser 部品番号
755-RF4P060BGTCR
|
ROHM Semiconductor
|
MOSFET Transistor, MOSFET Nch, 100V(Vdss), 6.0A(Id), (4.5V Drive)
|
|
8,274在庫
|
|
|
¥201
|
|
|
¥125.6
|
|
|
¥82.6
|
|
|
¥63.9
|
|
|
¥54.1
|
|
|
表示
|
|
|
¥58
|
|
|
¥46.3
|
|
|
¥45.3
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET Nch 40V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive AEC-Q101
- RF9G120BKFRATCR
- ROHM Semiconductor
-
1:
¥282.4
-
3,375在庫
|
Mouser 部品番号
755-RF9G120BKFRATCR
|
ROHM Semiconductor
|
MOSFET Nch 40V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive AEC-Q101
|
|
3,375在庫
|
|
|
¥282.4
|
|
|
¥133.7
|
|
|
¥119.1
|
|
|
¥93.7
|
|
|
¥74.9
|
|
|
表示
|
|
|
¥89.2
|
|
|
¥74.1
|
|
|
¥73.4
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET Nch 60V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive
- RF9L120BKFRATCR
- ROHM Semiconductor
-
1:
¥280.7
-
3,465在庫
|
Mouser 部品番号
755-RF9L120BKFRATCR
|
ROHM Semiconductor
|
MOSFET Nch 60V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive
|
|
3,465在庫
|
|
|
¥280.7
|
|
|
¥177.7
|
|
|
¥118.3
|
|
|
¥92.8
|
|
|
¥74.2
|
|
|
表示
|
|
|
¥84.7
|
|
|
¥72.1
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET TO263 100V 80A N-CH MOSFET
- RJ1P04BBHTL1
- ROHM Semiconductor
-
1:
¥747.5
-
1,546在庫
|
Mouser 部品番号
755-RJ1P04BBHTL1
|
ROHM Semiconductor
|
MOSFET TO263 100V 80A N-CH MOSFET
|
|
1,546在庫
|
|
|
¥747.5
|
|
|
¥493.3
|
|
|
¥347.1
|
|
|
¥297.3
|
|
|
¥294
|
|
|
表示
|
|
|
¥284
|
|
|
¥279
|
|
最低： 1
複数： 1
:
800
|
|
|
|
|
MOSFET TO263 100V 120A N-CH MOSFET
- RJ1P07CBHTL1
- ROHM Semiconductor
-
1:
¥980
-
950在庫
|
Mouser 部品番号
755-RJ1P07CBHTL1
|
ROHM Semiconductor
|
MOSFET TO263 100V 120A N-CH MOSFET
|
|
950在庫
|
|
|
¥980
|
|
|
¥654.4
|
|
|
¥470.1
|
|
|
¥415.3
|
|
|
¥402
|
|
最低： 1
複数： 1
:
800
|
|
|
|
|
MOSFET TO263 100V 170A N-CH MOSFET
- RJ1P10BBHTL1
- ROHM Semiconductor
-
1:
¥1,350.4
-
1,567在庫
|
Mouser 部品番号
755-RJ1P10BBHTL1
|
ROHM Semiconductor
|
MOSFET TO263 100V 170A N-CH MOSFET
|
|
1,567在庫
|
|
|
¥1,350.4
|
|
|
¥916.9
|
|
|
¥671
|
|
|
¥656.1
|
|
|
¥639.5
|
|
|
¥616.2
|
|
最低： 1
複数： 1
:
800
|
|
|
|
|
MOSFET Pch -40V -27A, HSMT8AG, Power MOSFET for Automotive
- RQ3G270BJFRATCB
- ROHM Semiconductor
-
1:
¥347.1
-
3,674在庫
|
Mouser 部品番号
755-RQ3G270BJFRATCB
|
ROHM Semiconductor
|
MOSFET Pch -40V -27A, HSMT8AG, Power MOSFET for Automotive
|
|
3,674在庫
|
|
|
¥347.1
|
|
|
¥222.6
|
|
|
¥149.2
|
|
|
¥118.4
|
|
|
¥101.5
|
|
|
表示
|
|
|
¥108.5
|
|
|
¥96.3
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET Automotive Nch 40V 27A Power MOSFET for ADAS/Info./Lighting/Body.
- RQ3G270BKFRATCB
- ROHM Semiconductor
-
1:
¥347.1
-
3,500在庫
|
Mouser 部品番号
755-RQ3G270BKFRATCB
|
ROHM Semiconductor
|
MOSFET Automotive Nch 40V 27A Power MOSFET for ADAS/Info./Lighting/Body.
|
|
3,500在庫
|
|
|
¥347.1
|
|
|
¥222.6
|
|
|
¥149.2
|
|
|
¥118.4
|
|
|
¥108.5
|
|
|
¥97
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET HSMT8 N-CH 60V 20A
- RQ3L070BGTB1
- ROHM Semiconductor
-
1:
¥144.5
-
4,218在庫
|
Mouser 部品番号
755-RQ3L070BGTB1
|
ROHM Semiconductor
|
MOSFET HSMT8 N-CH 60V 20A
|
|
4,218在庫
|
|
|
¥144.5
|
|
|
¥93
|
|
|
¥76.2
|
|
|
¥73.1
|
|
|
¥70.3
|
|
|
表示
|
|
|
¥70.4
|
|
|
¥66.1
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
- RQ3L270BKFRATCB
- ROHM Semiconductor
-
1:
¥358.8
-
3,461在庫
|
Mouser 部品番号
755-RQ3L270BKFRATCB
|
ROHM Semiconductor
|
MOSFET Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
|
|
3,461在庫
|
|
|
¥358.8
|
|
|
¥229.2
|
|
|
¥154.6
|
|
|
¥122.9
|
|
|
¥112.8
|
|
|
¥101.5
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
- RQ3L270BLFRATCB
- ROHM Semiconductor
-
1:
¥358.8
-
3,500在庫
|
Mouser 部品番号
755-RQ3L270BLFRATCB
|
ROHM Semiconductor
|
MOSFET Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
|
|
3,500在庫
|
|
|
¥358.8
|
|
|
¥172.7
|
|
|
¥154.6
|
|
|
¥122.9
|
|
|
¥117.9
|
|
|
¥102.2
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET Nch 100V 27A, HSMT8AG, Power MOSFET for Automotive
- RQ3P270BKFRATCB
- ROHM Semiconductor
-
1:
¥360.4
-
3,477在庫
|
Mouser 部品番号
755-RQ3P270BKFRATCB
|
ROHM Semiconductor
|
MOSFET Nch 100V 27A, HSMT8AG, Power MOSFET for Automotive
|
|
3,477在庫
|
|
|
¥360.4
|
|
|
¥230.9
|
|
|
¥155.6
|
|
|
¥123.6
|
|
|
¥107
|
|
|
表示
|
|
|
¥113.4
|
|
|
¥101.7
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
MOSFET HSOP8 N-CH 40V 120A
- RS6G120BHTB1
- ROHM Semiconductor
-
1:
¥627.9
-
2,500在庫
|
Mouser 部品番号
755-RS6G120BHTB1
|
ROHM Semiconductor
|
MOSFET HSOP8 N-CH 40V 120A
|
|
2,500在庫
|
|
|
¥627.9
|
|
|
¥410.3
|
|
|
¥299
|
|
|
¥250.8
|
|
|
¥222.6
|
|
|
表示
|
|
|
¥232.5
|
|
|
¥219.3
|
|
最低： 1
複数： 1
:
2,500
|
|
|
|
|
MOSFET HSOP8 N-CH 60V 90A
- RS6L090BGTB1
- ROHM Semiconductor
-
1:
¥523.2
-
2,516在庫
|
Mouser 部品番号
755-RS6L090BGTB1
|
ROHM Semiconductor
|
MOSFET HSOP8 N-CH 60V 90A
|
|
2,516在庫
|
|
|
¥523.2
|
|
|
¥340.5
|
|
|
¥234.2
|
|
|
¥189.4
|
|
|
¥182.7
|
|
|
¥169.4
|
|
最低： 1
複数： 1
:
2,500
|
|
|
|
|
MOSFET HSOP8 N-CH 60V 150A
- RS6L120BHTB1
- ROHM Semiconductor
-
1:
¥627.9
-
2,440在庫
|
Mouser 部品番号
755-RS6L120BHTB1
|
ROHM Semiconductor
|
MOSFET HSOP8 N-CH 60V 150A
|
|
2,440在庫
|
|
|
¥627.9
|
|
|
¥317.3
|
|
|
¥287.4
|
|
|
¥234.2
|
|
|
¥219.3
|
|
最低： 1
複数： 1
:
2,500
|
|
|
|
|
MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
- SH8KE7TB1
- ROHM Semiconductor
-
1:
¥501.6
-
4,591在庫
|
Mouser 部品番号
755-SH8KE7TB1
|
ROHM Semiconductor
|
MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
|
|
4,591在庫
|
|
|
¥501.6
|
|
|
¥249.2
|
|
|
¥224.2
|
|
|
¥181
|
|
|
¥165.1
|
|
|
表示
|
|
|
¥176.1
|
|
|
¥161.9
|
|
最低： 1
複数： 1
:
2,500
|
|
|
|
|
MOSFET DFN 100V 2A DUAL CH
- UT6ME5TCR
- ROHM Semiconductor
-
1:
¥79.7
-
7,788在庫
-
12,000予想2027/02/22
|
Mouser 部品番号
755-UT6ME5TCR
|
ROHM Semiconductor
|
MOSFET DFN 100V 2A DUAL CH
|
|
7,788在庫
12,000予想2027/02/22
|
|
|
¥79.7
|
|
|
¥50.3
|
|
|
¥40.5
|
|
|
¥38.5
|
|
|
¥34.9
|
|
|
表示
|
|
|
¥37
|
|
|
¥34.1
|
|
|
¥33.9
|
|
最低： 1
複数： 1
:
3,000
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥375.4
-
2,583在庫
|
Mouser 部品番号
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
2,583在庫
|
|
|
¥375.4
|
|
|
¥240.8
|
|
|
¥162.3
|
|
|
¥129.1
|
|
|
表示
|
|
|
¥107.3
|
|
|
¥118.4
|
|
|
¥111.6
|
|
|
¥107.3
|
|
最低： 1
複数： 1
:
4,000
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
- YQ10RSM10SDTL1
- ROHM Semiconductor
-
1:
¥328.9
-
7,534在庫
|
Mouser 部品番号
755-YQ10RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
|
|
7,534在庫
|
|
|
¥328.9
|
|
|
¥209.3
|
|
|
¥140.5
|
|
|
¥111.3
|
|
|
¥91.5
|
|
|
表示
|
|
|
¥101.8
|
|
|
¥93.8
|
|
|
¥89.5
|
|
最低： 1
複数： 1
:
4,000
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
- YQ12RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥405.3
-
3,950在庫
|
Mouser 部品番号
755-YQ12RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
|
|
3,950在庫
|
|
|
¥405.3
|
|
|
¥260.8
|
|
|
¥177.7
|
|
|
¥141.2
|
|
|
表示
|
|
|
¥118.8
|
|
|
¥129.7
|
|
|
¥124.4
|
|
|
¥118.8
|
|
最低： 1
複数： 1
:
4,000
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
- YQ12RSM10SDTL1
- ROHM Semiconductor
-
1:
¥355.5
-
3,568在庫
|
Mouser 部品番号
755-YQ12RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
|
|
3,568在庫
|
|
|
¥355.5
|
|
|
¥227.6
|
|
|
¥152.6
|
|
|
¥121.4
|
|
|
表示
|
|
|
¥98.8
|
|
|
¥110.8
|
|
|
¥103.6
|
|
|
¥98.8
|
|
最低： 1
複数： 1
:
4,000
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
- YQ15RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥418.6
-
5,557在庫
|
Mouser 部品番号
755-YQ15RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
|
|
5,557在庫
|
|
|
¥418.6
|
|
|
¥269.1
|
|
|
¥182.7
|
|
|
¥146.2
|
|
|
表示
|
|
|
¥123.2
|
|
|
¥134.4
|
|
|
¥129.6
|
|
|
¥123.2
|
|
最低： 1
複数： 1
:
4,000
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
- YQ15RSM10SDTL1
- ROHM Semiconductor
-
1:
¥365.4
-
4,095在庫
|
Mouser 部品番号
755-YQ15RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
|
|
4,095在庫
|
|
|
¥365.4
|
|
|
¥177.7
|
|
|
¥158
|
|
|
¥125.6
|
|
|
表示
|
|
|
¥103.6
|
|
|
¥119.9
|
|
|
¥115.8
|
|
|
¥103.6
|
|
最低： 1
複数： 1
:
4,000
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20BGE10SDTL
- ROHM Semiconductor
-
1:
¥348.8
-
4,797在庫
|
Mouser 部品番号
755-YQ20BGE10SDTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
4,797在庫
|
|
|
¥348.8
|
|
|
¥169.4
|
|
|
¥149.3
|
|
|
¥119.3
|
|
|
¥101.2
|
|
|
表示
|
|
|
¥113.3
|
|
|
¥97.3
|
|
最低： 1
複数： 1
:
2,500
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
- YQ20BM10SDFHTL
- ROHM Semiconductor
-
1:
¥345.5
-
4,497在庫
-
2,500予想2026/10/26
|
Mouser 部品番号
755-YQ20BM10SDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
|
|
4,497在庫
2,500予想2026/10/26
|
|
|
¥345.5
|
|
|
¥219.3
|
|
|
¥154.3
|
|
|
¥125.7
|
|
|
¥103.8
|
|
|
表示
|
|
|
¥114.4
|
|
|
¥103.1
|
|
最低： 1
複数： 1
:
2,500
|
|
|
日本