VSMA1085750X02

Name: Vishay VSMA1085750X02
Brand: Vishay Semiconductors
SKU: 78-VSMA1085750X02
Price: 536 JPY
Availability: InStock

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Mouser #:

78-VSMA1085750X02

Mfr. #:

VSMA1085750X02

Mfr.:

Vishay Semiconductors

Description:

Infrared Emitters HIPOW IR EMITTING DIODE 940NM -E3

Datasheet:

VSMA1085750X02 Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	Infrared Emitters
RoHS:
Mounting Style:	SMD/SMT
Wavelength:	850 nm
Radiant Intensity:	1600 mW/sr
If - Forward Current:	1 A, 1.5 A
Vf - Forward Voltage:	3.9 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Package / Case:	3.4 mm x 3.4 mm
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay Semiconductors
Fall Time:	16 ns
Moisture Sensitive:	Yes
Product Type:	IR Emitters (IR LEDs)
Rise Time:	13 ns
Series:	VSM
Factory Pack Quantity:	600
Subcategory:	Infrared Data Communications

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Datasheet

VSMA1085750X02 Datasheet

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Compliance Codes

JPHTS:: 854141000
CNHTS:: 8541410090
CAHTS:: 8541410000
USHTS:: 8541410000
TARIC:: 8541410000
MXHTS:: 8541410100
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

VSMA1085750X02 High Power Infrared Emitting Diode

Vishay VSMA1085750X02 High Power Infrared Emitting Diode is part of the Astral portfolio. Vishay VSMA1085750X02 is an 850nm infrared emitting diode with a double stack emitter chip for maximum radiant power. The device has a 42-millimeter chip size, allows 1.5A DC operation, and accommodates pulsed currents up to 5.0A.