STGWT28IH125DF

Name: STMicroelectronics STGWT28IH125DF
Brand: STMicroelectronics
SKU: 511-STGWT28IH125DF
Price: 350 JPY
Availability: OutOfStock

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Mouser #:

511-STGWT28IH125DF

Mfr. #:

STGWT28IH125DF

Mfr.:

STMicroelectronics

Description:

IGBTs 1250V 25A trench gte field-stop IGBT

Complete Your Design

Datasheet:

STGWT28IH125DF Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package / Case:	TO-3P-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.25 kV
Collector-Emitter Saturation Voltage:	2.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	375 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWT28IH125DF
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	30 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBTs
Factory Pack Quantity:	300
Subcategory:	Transistors
Unit Weight:	7 g

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Datasheet

STGWT28IH125DF Datasheet (PDF)

PCN

Compliance Codes

JPHTS:: 854129000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STGWT28IH125DF Trench Gate Field-Stop IGBT

STMicroelectronics STGWT28IH125DF Trench Gate Field-Stop IGBTs feature an advanced proprietary trench gate field-stop structure. Performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. STMicroelectronics STGWT28IH125DF IGBTs maximize efficiency for any resonant and soft-switching application.