Results: 40
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
IXYS MOSFETs High Voltage Power MOSFET 2,247In Stock
¥1,144.4
¥609.6
¥579.7
¥496.6
¥488.3
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 2.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube
IXYS MOSFETs TO268 1.5KV 12A N-CH HIVOLT 261In Stock
¥11,067.2
¥8,858.1
Min.: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.5 kV 12 A 2.2 Ohms 30 V 2.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube
IXYS MOSFETs 1500V High Voltage Power MOSFET 310In Stock
¥3,411.7
¥2,049.7
¥1,918.5
¥1,847
Min.: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 12 A 2 Ohms 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube
IXYS MOSFETs 6 Amps 1200V 2.700 Rds 274In Stock
¥2,880.2
¥1,646.1
¥1,534.8
¥1,431.8
Min.: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 6 A 2.6 Ohms 20 V 5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs >1200V High Voltage Power MOSFET 275In Stock
¥3,685.8
¥2,451.6
¥2,293.8
¥2,106.1
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 12 A 2 Ohms 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube

IXYS MOSFETs High Voltage Power MOSFET 248In Stock
¥2,655.9
¥1,504.9
¥1,475
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 6 Ohms 30 V 5 V 44.5 nC - 55 C + 150 C 110 W Enhancement Tube
IXYS MOSFETs 0.75 Amps 1000V 15 Rds 549In Stock
¥774
¥398.6
¥360.4
¥295.7
¥289
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube

IXYS MOSFETs 3 Amps 1200V 4.500 Rds 211In Stock
90Expected 12/22/2026
¥1,973.3
¥1,270.7
¥1,171
¥1,039.8
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 4.5 V 39 nC - 55 C + 150 C 150 W Enhancement Tube

IXYS MOSFETs High Voltage Power MOSFET 165In Stock
¥2,142.7
¥1,406.9
¥1,305.5
¥1,159.4
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 4 A 6 Ohms 30 V 2.5 V 44.5 nC - 55 C + 150 C 280 W Enhancement Tube
IXYS MOSFETs 0.5 Amps 1000V 300In Stock
¥998.3
¥524.9
¥460.1
¥406.9
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 700 mA 15 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 25 W Enhancement Tube

IXYS MOSFETs 1 127In Stock
¥3,989.7
¥2,838.6
¥2,837
¥2,704.1
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 16 A 950 mOhms 30 V 3.5 V 120 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs 3 Amps 1200V 4.5 Rds 962In Stock
1,550Expected 11/2/2026
¥1,742.4
¥1,033.1
¥1,031.5
¥976.7
¥925.2
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 150 W Enhancement Tube
IXYS MOSFETs MOSFET Id3 BVdass1200 598In Stock
¥1,777.3
¥1,073
¥970
¥925.2
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube

IXYS MOSFETs 1500 V High Voltage Power MOSFET 295In Stock
300Expected 3/23/2027
¥5,662.3
¥4,205.7
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 20 A 1 Ohms 30 V 4.5 V 215 nC - 55 C + 150 C 1.25 kW Enhancement Tube
IXYS MOSFETs TO263 1.5KV 3A N-CH HIVOLT 151In Stock
300Expected 11/4/2026
¥2,644.3
¥1,539.7
¥1,428.5
¥1,401.9
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube
IXYS MOSFETs TO263 150V 4A N-CH HIVOLT 83In Stock
¥2,692.5
¥1,558
¥1,503.2
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 4 A 6 Ohms 30 V 2.5 V 375 nC - 55 C + 150 C 280 W Enhancement Tube

IXYS MOSFETs High Voltage Power MOSFET 1In Stock
¥3,114.4
¥1,988.2
¥1,682.6
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube

IXYS MOSFETs 6 Amps 1200V 2.700 Rds 96In Stock
¥2,880.2
¥1,646.1
¥1,641.1
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.4 Ohms 20 V 2.5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFETs 0.1 Amps 1000V 80 Rds 300In Stock
¥691
¥360.4
¥323.9
¥277.4
¥275.7
Min.: 1
Mult.: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 100 mA 80 Ohms 20 V - 55 C + 150 C 25 W Enhancement Tube
IXYS MOSFETs TO263 1.2KV 3A N-CH HIVOLT
337Expected 2/16/2027
¥1,865.3
¥1,066.4
¥983.3
¥895.3
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube
IXYS MOSFETs 0.75 Amps 1000V 15 Rds Non-Stocked Lead-Time 19 Weeks
¥524.9
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube

IXYS MOSFETs HIGH VOLT PWR MOSFET 1500V 6A Non-Stocked Lead-Time 32 Weeks
¥2,793.8
¥1,828.8
¥1,496.6
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 6 A 3.5 Ohms 20 V 5 V 67 nC - 55 C + 150 C 540 W Enhancement Tube

IXYS MOSFETs High Voltage Power MOSFET Non-Stocked Lead-Time 24 Weeks
¥1,966.6
¥1,921.8
¥1,875.3
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 3.85 Ohms 30 V 2.5 V 67 nC - 55 C + 150 C 125 W Enhancement Tube
IXYS MOSFETs 1200V High Voltage Power MOSFET Non-Stocked Lead-Time 24 Weeks
¥10,909.4
¥9,477.7
¥8,343.2
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1.5 kV 20 A 1 Ohms Tube
IXYS MOSFETs 2 Amps 800V 6.2 Rds Non-Stocked
¥456.8
¥338.8
¥284
¥264.1
¥247.5
Min.: 50
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 2 A 6.2 Ohms 20 V - 55 C + 150 C 54 W Enhancement Tube