CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4,511In Stock
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¥647.8
¥425.2
¥297.3
¥244.2
¥234.2
Reel
¥197.7
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,815In Stock
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¥476.7
¥308.9
¥212.6
¥171.1
Reel
¥133.5
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,699In Stock
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¥415.3
¥267.4
¥182.7
¥145.5
Reel
¥113.1
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,661In Stock
1,800Expected 1/28/2027
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¥1,828.8
¥1,046.4
¥993.3
¥936.8
¥810.6
Reel
¥803.9
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 977In Stock
Cut Tape
¥1,423.5
¥774
¥710.9
¥699.3
¥609.6
Reel
¥569.7
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,262In Stock
Cut Tape
¥784
¥518.2
¥367.1
¥315.6
Reel
¥255.8
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 602In Stock
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¥2,214.1
¥1,484.9
¥1,375.3
¥1,192.6
Reel
¥999.9
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 467In Stock
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¥1,832.1
¥1,019.9
¥973.3
¥795.6
Reel
¥794
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2,068In Stock
Cut Tape
¥1,466.7
¥798.9
¥715.9
Reel
¥632.8
¥593
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
¥1,224.2
¥656.1
¥601.3
¥483.4
Reel
¥466.7
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
9,060On Order
Cut Tape
¥2,112.8
¥1,197.6
¥1,179.3
¥1,167.7
¥963.4
Reel
¥961.7
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
3,596Expected 11/19/2026
Cut Tape
¥1,194.3
¥707.6
¥609.6
¥559.8
¥480
Reel
¥480
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN