SiC Schottky Barrier Diodes

ROHM Semiconductor^® SiC (Silicon Carbide) Schottky Barrier Diodes feature low total capacitive (Q_c) that reduces switching loss, enabling high-speed switching operation. In addition, unlike silicon-based fast recovery diodes where the t_rr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. These devices are ideal for use as key devices in a variety of applications, including inverters and chargers for EVs and solar power conditioners.