HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 719
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A 79In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs 7 Amps 1000V 153In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 7 A 1.9 Ohms - 30 V, 30 V 6 V 47 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/150A Ultra Junction X2 39In Stock
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 650 V 150 A 17 mOhms - 30 V, 30 V 2.7 V 430 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs 30 Amps 1200V 0.35 Rds 1In Stock
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1.2 kV 30 A 350 mOhms - 30 V, 30 V 6.5 V 310 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/44A 54In Stock
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 44 A 220 mOhms - 30 V, 30 V 3.5 V 264 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube

IXYS MOSFETs 10 Amps 1000V 266In Stock
300Expected 2/15/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.4 Ohms - 30 V, 30 V 6.5 V 56 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFETs 120 Amps 200V 0.022 Rds 16In Stock
750Expected 1/4/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 120 A 22 mOhms - 20 V, 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds 123In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 12 A 900 mOhms - 30 V, 30 V 6.5 V 56 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id14 BVdass800 119In Stock
300Expected 3/22/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 14 A 720 mOhms - 30 V, 30 V 5.5 V 61 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs TO247 850V 14A N-CH X3CLASS 219In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 HiPerFET Tube

IXYS MOSFETs 175V 150A 19In Stock
300Expected 12/23/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 175 V 150 A 12 mOhms - 30 V, 30 V 2.5 V 233 nC - 55 C + 175 C 880 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 150A N-CH X3CLASS 9In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 150 A 8.3 mOhms - 20 V, 20 V 2.5 V 254 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/15A 36In Stock
300Expected 9/22/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 1.05 Ohms - 30 V, 30 V 6.5 V 64 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET 208In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 360 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 330 W Enhancement HiPerFET Tube

IXYS MOSFETs 170 Amps 100V 0.009 Rds 95In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 200V 180A N-CH X3CLASS 41In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 180 A 7.5 mOhms - 20 V, 20 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET 64In Stock
300Expected 3/22/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 200V 220A N-CH X3CLASS 5In Stock
300Expected 12/7/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 220 A 6.2 mOhms - 20 V, 20 V 2.5 V 204 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET 34In Stock
3,810Expected 1/11/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 360 mOhms - 30 V, 30 V 5 V 38 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET 151In Stock
570On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 28 A 260 mOhms - 30 V, 30 V 5 V 50 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 36A 76In Stock
300Expected 12/29/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 36 A 190 mOhms - 30 V, 30 V 3 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 56A N-CH X3CLASS 137In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs 69 Amps 300V 0.049 Rds 133In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 69 A 49 mOhms - 20 V, 20 V 5 V 156 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 500V 14A N-CH POLAR3 18In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 14 A 295 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs 230A 200V 1In Stock
300Expected 9/14/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 230 A 7.5 mOhms - 20 V, 20 V 5 V 358 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube