HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs TO220 250V 44A N-CH X3CLASS
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 44 A 40 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 850V 4A N-CH XCLASS
Datasheet
Non-Stocked Lead-Time 34 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 3.5 A 2.5 Ohms - 30 V, 30 V 3 V 7 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V/3.5A UlJun XCl HiPerFET Pwr MOSFET
Datasheet
Non-Stocked Lead-Time 34 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 3.5 A 2.5 Ohms - 30 V, 30 V 3 V 7 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 1KV 5A N-CH POLAR
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220FP-3 N-Channel 1 Channel 1 kV 2.3 A 2.8 Ohms - 30 V, 30 V 3 V 33.4 nC - 55 C + 150 C 42 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 200V 72A N-CH X3CLASS
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube
IXYS MOSFETs 4 Amps 800V 1.44 Rds
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.5 Ohms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 50 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/8A TO-220
Datasheet
Non-Stocked Lead-Time 35 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 450 mOhms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V/8A U-Junc X-Cla ss Power MOSFET
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 8 A 850 mOhms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 850V 8A N-CH XCLASS
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 8 A 850 mOhms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 33 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 200V 90A N-CH X3CLASS
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 22 A 360 mOhms - 30 V, 30 V 5 V 38 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-3P (3)
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 24 A 175 mOhms - 30 V, 30 V 2.5 V 47 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 28 A 260 mOhms - 30 V, 30 V 5 V 50 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-3P (3)
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 30 A 155 mOhms - 30 V, 30 V 2.5 V 56 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 500 V 34 A 180 mOhms HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 50 A 125 mOhms - 30 V, 30 V 5 V 85 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 50 A 145 mOhms - 30 V, 30 V 5 V 94 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-3P (3)
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 50 A 73 mOhms - 30 V, 30 V 2.5 V 116 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 250 V 60 A 19 mOhms - 20 V, 20 V 2.5 V 50 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC 1.04 mW HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-3P (3)
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 60 A 55 mOhms - 30 V, 30 V 2.5 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs TO3P 200V 72A N-CH X3CLASS
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs TO3P 200V 90A N-CH X3CLASS
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFETs 54 Amps 300V 0.033 Rds
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 60 A 36 mOhms - 20 V, 20 V 5 V 224 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube

IXYS MOSFETs 16 Amps 1200V 1 Rds
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 9 A 1.04 Ohms - 30 V, 30 V - 55 C + 150 C 230 W Enhancement HiPerFET Tube