HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs TO263 200V 90A N-CH X3CLASS
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 90 A 12 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 175 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 100V 5.4 Rds
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 25

Si Through Hole ISOPLUS-i4-PAK-5 N-Channel 1 Channel 100 V 120 A 6.3 mOhms - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 150V 102A N-CH TRENCH
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 102 A 18 mOhms - 20 V, 20 V 2.5 V 87 nC - 55 C + 175 C 455 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 700V 12A N-CH X2CLASS
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 12 A 300 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 180 W Enhancement HiPerFET Tube

IXYS MOSFETs 130 Amps 100V 8.5 Rds
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 130 A 8.5 mOhms - 20 V, 20 V 2.5 V 104 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs 130 Amps 150V 12 Rds
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 130 A 12 mOhms HiPerFET Bulk

IXYS MOSFETs 160Amps 150V
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 160 A 8 mOhms - 30 V, 30 V 2.5 V 160 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs 40V/270A TrenchT4 Power MOSFET
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 40 V 270 A 2.4 mOhms - 15 V, 15 V 2 V 182 nC - 55 C + 175 C 375 W Enhancement HiPerFET Tube

IXYS MOSFETs Trench T2 Power MOSFET
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 40 V 300 A 2.5 mOhms - 20 V, 20 V 4 V 145 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs TRENCHT2 PWR MOSFET 55V 440A
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 55 V 440 A 1.8 mOhms - 20 V, 20 V 2 V 405 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube

IXYS MOSFETs 650V/9A Power MOSFET
Datasheet
Non-Stocked Lead-Time 41 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 52 A 68 mOhms - 30 V, 30 V 3 V 113 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 62A N-CH X2CLASS
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 62 A 50 mOhms - 30 V, 30 V 2.7 V 100 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 250V 86A N-CH TRENCH
Datasheet
Non-Stocked Lead-Time 33 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 250 V 86 A 37 mOhms - 20 V, 20 V 3 V - 55 C + 150 C 540 W HiPerFET Tube

IXYS MOSFETs 96 Amps 250V 36 Rds
Datasheet
Non-Stocked Lead-Time 33 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 96 A 29 mOhms - 30 V, 30 V - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 55 V 550 A 1.6 mOhms - 20 V, 20 V 2 V 595 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 100V 6.1 Rds
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 25

Si Through Hole ISOPLUS-i5-PAK-5 N-Channel 2 Channel 100 V 200 A 7.4 mOhms - 55 C + 175 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 120 Amps 40V
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 120 A 6.1 mOhms - 20 V, 20 V 4 V 58 nC - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 650V 12A N-CH X2CLASS
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 300 mOhms - 30 V, 30 V 2.5 V 17.7 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 700V 12A N-CH X2CLASS
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12 A 300 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 700V 12A N-CH X2CLASS
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12 A 300 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET Id130 BVdass100
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 130 A 8.5 mOhms - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 160 Amps 40V
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 160 A 5 mOhms - 20 V, 20 V 2 V 79 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs IXTP170N13X4
Datasheet
Non-Stocked Lead-Time 30 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 135 V 170 A 6.3 mOhms - 20 V, 20 V 2.5 V 105 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 55V 0.0042 Rds
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 200 A 4.2 mOhms - 20 V, 20 V 2 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/9A Power MOSFET
Datasheet
Non-Stocked
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 210 mOhms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube