Skip to Main Content

Part of the TTI Family of SpecialistsContact Mouser 0120-954-990Feedback

Change Location

0120-954-990 Change Location

In Stock

RoHS

Macnica - Tech Info

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

AS4C4M16D1A-5TANTR

Alliance Memory

Images are for reference only
See Product Specifications

Mouser #:

913-4C4M16D1A-5TANTR

Mfr. #:

AS4C4M16D1A-5TANTR

Mfr.:

Alliance Memory

Description:

DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Automotive Temp(A), T&R

Datasheet:

AS4C4M16D1A-5TANTR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR
Memory Size:	64 Mbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	200 MHz
Package / Case:	TSOP-II-66
Organization:	4 M x 16
Access Time:	5 ns
Supply Voltage - Min:	2.3 V
Supply Voltage - Max:	2.7 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Series:	AS4C4M16D1A
Packaging:	Reel
Brand:	Alliance Memory
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	1000
Subcategory:	Memory & Data Storage
Supply Current - Max:	66 mA

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

AS4C4M16D1A-5TANTR Datasheet (PDF)

Compliance Codes

JPHTS:: 854232021
USHTS:: 8542320002
MXHTS:: 8542320201
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Taiwan
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

ALLIANCE MEMORY

AS4C512M16D4D/1G8D4D 8Gb DDR4 SDRAMs

High-speed dynamic random-access memory is internally organized with eight banks or sixteen banks.

AS4C256M16D4 & AS4C512M8D4 4GB DDR4 SDRAMs

Offers low power consumption and fast data transfer rates in 96-ball and 78-ball FBGA packages.

MT41x DDR3 SDRAMs

Feature double data rate 8n-prefetch architecture to achieve high-speed operation.

Fabricated using high-performance, and high-reliability CMOS technology.

Low-Power DDR2 SDRAM

High-speed CMOS and dynamic-access memory that are internally configured as a 8-bank memory device.

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1000 Multiples: 1000

Unit Price:

¥-

Ext. Price:

¥-

Est. Tariff:

This Product Ships FREE

Pricing (JPY)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	¥1,290.6	¥1,290,600