SiT8008 Low Power Programmable Oscillators

SiTime SiT8008 and SiT8008B low-power programmable oscillators include a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. The programmable drive strength improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The programmable drive strength also improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. The components have the ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The oscillators exhibit EMI reduction by slowing rise/fall time and jitter reduction with faster rise/fall time. Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The components have high output load capability. The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. The devices can support up to 60pF or higher in maximum capacitive loads with drive strength settings.

Results: 661
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS Package / Case Frequency Frequency Stability Load Capacitance Supply Voltage - Min Supply Voltage - Max Output Format Current Rating Minimum Operating Temperature Maximum Operating Temperature Qualification Series
SiTime MEMS Oscillators 25MHz -20C +70C 3.3V 50ppm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

5 mm x 3.2 mm 25 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 5032, 50ppm, 3.3V, 50MHz, OE, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators 50.0MHz -20C +70C 3.3V 50ppm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

5 mm x 3.2 mm 50 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 5032, 50ppm, 3.3V, 90MHz, OE, 250 pcs T&R 12/16 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

AEC-Q100 SiT8008B
SiTime MEMS Oscillators 33.33333MHz 1.8V 50ppm -20C +70C Non-Stocked
Min.: 1
Mult.: 1
: 250

5 mm x 3.2 mm 33.33333 MHz 50 PPM 15 pF 1.62 V 1.98 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 5032, 50ppm, 3.3V, 1.8432MHz, OE, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators 10MHz 20ppm 1.8V -20C +70C Non-Stocked
Min.: 1
Mult.: 1
: 250

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 20ppm, 1.8V, 16MHz, ST, 250 pcs T&R 8 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 20ppm, 2.5V, 100MHz, OE, 1k pcs T&R 8 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

2 mm x 1.6 mm 100 MHz 20 PPM 15 pF 2.25 V 2.75 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 20ppm, 3.3V, 26.6MHz, ST, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 20ppm, 3.3V, 27MHz, ST, 250 pcs T&R 8 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 20ppm, 3.3V, 4MHz, ST, 250 pcs T&R 8 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 20ppm, 3.3V, 4MHz, ST, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 20ppm, 3.3V, 50MHz, ST, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 25ppm, 3.3V, 24MHz, OE, 1k pcs T&R 8 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

2 mm x 1.6 mm 24 MHz 25 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 50ppm, 3.3V, 24MHz, OE, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 1,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 50ppm, 3.3V, 26MHz, OE, 250 pcs T&R 8 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 2016, 50ppm, 3.3V, 50MHz, OE, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 1,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators 25.0MHz -20C +70C 3.3V 20ppm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

7 mm x 5 mm 25 MHz 20 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 7050, 20ppm, 3.3V, 50MHz, OE, T&R Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

AEC-Q100 SiT8008B
SiTime MEMS Oscillators 50MHz -20C +70C 3.3V 20ppm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

7 mm x 5 mm 50 MHz 20 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 7050, 20ppm, 3.3V, 54MHz, NC, 1k pcs T&R 12/16 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

7 mm x 5 mm 54 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 7050, 20ppm, 3.3V, 54MHz, NC, 250 pcs T&R 12/16 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

7 mm x 5 mm 54 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 7050, 20ppm, 3.3V, 55MHz, NC, 1k pcs T&R 12/16 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

7 mm x 5 mm 55 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS Oscillators -20 to 70C, 7050, 20ppm, 3.3V, 55MHz, NC, 250 pcs T&R 12/16 mm Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 250

7 mm x 5 mm 55 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B