EPC Semiconductors

Results: 171
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS
EPC Power Management IC Development Tools 150 ARMS 3-Phase BLDC Motor Drive Reference Design Board Non-Stocked Lead-Time 8 Weeks
¥186,862.5
Min.: 20
Mult.: 20
EPC Amplifier IC Development Tools 2 x 700 W/4 ? Class-D Audio Amplifier Reference Design Board Non-Stocked Lead-Time 8 Weeks
¥160,103.8
Min.: 20
Mult.: 20
EPC Power Management IC Development Tools 40 ARMS 3-Phase BLDC Motor Drive Reference Design Board Non-Stocked Lead-Time 8 Weeks
¥152,516.3
Min.: 20
Mult.: 20
EPC Power Management IC Development Tools 20 ARMS 3-Phase BLDC Motor Drive Reference Design Board Non-Stocked Lead-Time 8 Weeks
¥151,920
Min.: 20
Mult.: 20
EPC Power Management IC Development Tools 40 ARMS 3-Phase BLDC Motor Drive Reference Design Board Non-Stocked Lead-Time 8 Weeks
¥151,920
Min.: 20
Mult.: 20
EPC Power Management IC Development Tools High efficiency, small, single-phase, buck converter Non-Stocked Lead-Time 8 Weeks
¥83,050
Min.: 20
Mult.: 20
EPC GaN FETs EPC eGaN FET,100 V, 3300 milliohm at 5 V, BGA 0.9 x 0.9 Lead-Time 18 Weeks
Cut Tape
¥362.1
¥179.4
¥154.8
¥124.2
Reel
¥106.3
Min.: 1
Mult.: 1
: 2,500
EPC GaN FETs EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85 Non-Stocked Lead-Time 18 Weeks
Cut Tape
¥350.5
¥169.4
¥150.2
¥118.8
Reel
¥97.2
Min.: 1
Mult.: 1
: 2,500
EPC GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP Non-Stocked Lead-Time 18 Weeks
Reel
¥453.5
¥441.8
Min.: 1,000
Mult.: 1,000
: 1,000
EPC EPC23101
EPC GaN FETs ePower Stage IC integrating gate driver, level shifting, and power-stage control functions for GaN-based power conversion systems. Non-Stocked
¥818.9
Min.: 3,000
Mult.: 1
EPC EPC23104
EPC GaN FETs 100 V, 15 A ePower Stage IC with integrated high-side and low-side eGaN FETs and internal gate driver in 3.5 mm x 5 mm QFN package. Non-Stocked
¥1,121.2
¥750.8
¥602.9
¥536.5
¥430.2
Min.: 1
Mult.: 1
EPC EPC2367A
EPC GaN FETs 100 V enhancement-mode GaN power transistor, 101 A, 1.2 mOhm typ RDS(on), optimized for high-density DC-DC converters and motor drives. Non-Stocked
¥1,174.3
¥785.7
¥631.2
¥561.4
¥450.1
Min.: 1
Mult.: 1
EPC EPC2370
EPC GaN FETs 18 V, 151 A enhancement-mode eGaN power transistor with 0.28 mOhm typ RDS(on). Non-Stocked
¥1,239.1
¥810.6
¥596.3
¥529.9
Min.: 1
Mult.: 1
EPC EPC2371
EPC GaN FETs 25 V GaN power transistor, 88 A, 0.65 mOhm typ RDS(on), designed for synchronous rectification and POL buck converters. Non-Stocked
¥976.7
¥639.5
¥476.7
¥398.6
Min.: 1
Mult.: 1
EPC EPC2372
EPC GaN FETs 25 V enhancement-mode eGaN power transistor for high-frequency DC-DC conversion and synchronous rectification. Non-Stocked
¥470.1
Min.: 3,000
Mult.: 1
EPC EPC2373
EPC GaN FETs 18 V enhancement-mode eGaN power transistor, 88 A, 0.5 mOhm typ RDS(on), optimized for servers and AI power systems. Non-Stocked
¥890.3
¥583
¥433.5
¥363.8
Min.: 1
Mult.: 1
EPC EPC2374
EPC GaN FETs Enhancement-mode eGaN power transistor for high-efficiency DC-DC conversion and synchronous rectification. Non-Stocked
¥516.6
Min.: 3,000
Mult.: 1
EPC EPC2375
EPC GaN FETs Enhancement-mode eGaN power transistor for high-frequency power conversion applications. Non-Stocked
¥1,102.9
¥722.5
¥531.5
¥471.7
Min.: 1
Mult.: 1
EPC EPC2376
EPC GaN FETs Enhancement-mode eGaN power transistor for high-current, high-frequency DC-DC conversion and synchronous rectification. Non-Stocked
¥887
Min.: 3,000
Mult.: 1
EPC EPC2377
EPC GaN FETs 40 V, 101 A enhancement-mode eGaN power transistor with 0.5 mOhm typ RDS(on), optimized for 48 V-to-12 V LLC converter synchronous rectification. Non-Stocked
¥1,122.8
¥750.8
¥602.9
¥536.5
¥430.2
Min.: 1
Mult.: 1
EPC EPC2378
EPC GaN FETs 25 V, 101 A GaN power transistor with 0.41 mOhm typ RDS(on), optimized for high-performance DC-DC conversion and synchronous rectification. Non-Stocked
¥1,121.2
¥750.8
¥602.9
¥536.5
¥430.2
Min.: 1
Mult.: 1