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TQP3M9040

Name: Qorvo TQP3M9040
Brand: Qorvo
SKU: 772-TQP3M9040
Price: 1408 JPY
Availability: OutOfStock

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See Product Specifications

Mouser #:

772-TQP3M9040

Mfr. #:

TQP3M9040

Mfr.:

Qorvo

Description:

RF Amplifier 1.5-2.3GHz NF .67dB High Gain 18dB

Datasheet:

TQP3M9040 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Amplifier
RoHS:
Operating Frequency:	1.5 GHz to 2.3 GHz
Operating Supply Voltage:	5 V
Operating Supply Current:	57 mA
Gain:	18 dB
NF - Noise Figure:	0.18 dB
Type:	Low Noise Amplifiers
Mounting Style:	SMD/SMT
Package / Case:	QFN-16
Technology:	Si
P1dB - Compression Point:	20.8 dBm
OIP3 - Third Order Intercept:	39.8 dBm
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Series:	TQP3M9040
Packaging:	Reel
Brand:	Qorvo
Moisture Sensitive:	Yes
Product Type:	RF Amplifier
Factory Pack Quantity:	2500
Subcategory:	Wireless & RF Integrated Circuits
Test Frequency:	1.95 GHz
Part # Aliases:	1092873
Unit Weight:	57.100 mg

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Datasheet

TQP3M9040 Datasheet (PDF)

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Compliance Codes

JPHTS:: 8542330996
CNHTS:: 8542339000
CAHTS:: 8542330000
USHTS:: 8542330001
KRHTS:: 8532331000
TARIC:: 8542330000
MXHTS:: 8542330201
ECCN:: 5A991.b

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

TQP3M90xx High Linearity LNA Gain Block Amplifiers

Qorvo TQP3M90xx High Linearity LNA Gain Block Amplifiers offer high linearity and low noise figure, enabling use in both receiver and transmitter chains for high-performance systems. These High Linearity LNA Gain Block Amplifiers are internally matched using a high-performance E-pHEMT process and only require an external RF choke and blocking/bypass capacitors for operation from a single 5V supply. The Qorvo TQP3M90xx devices also feature an internal active bias circuit, enabling stable operation across bias and temperature variations.

TQP3M9040 & TQP3M9041 Dual Low Noise Amplifiers

Qorvo TQP3M9040 and TQP3M9041 Dual Low Noise Amplifiers (LNA) consist of a single monolithic GaAs (Gallium Arsenide) E-pHEMT (Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor) die and integrate bias circuitry as well as shut-down capability. This design enables the TQP3M9040 and TQP3M9041 LNAs to be useful for both Frequency Division Duplex (FDD) and Time Division Duplex (TDD) applications. Both devices do not require a negative supply for operation and are bias adjustable for both drain current and voltage. These balanced amplifiers are optimized for high performance receivers in wireless infrastructure and can be used for base-station transceivers or tower mounted amplifiers.