Guerrilla RF GRF0005 GaN HEMT Power Transistor

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Guerrilla RF GRF0005 GaN HEMT Power Transistor is a 5W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 12GHz on a 40V supply rail. This power transistor supports both linear and pulse operations and is 100% DC and RF production-tested, lead-free, and RoHS-compliant. The GRF0005 GaN HEMT power transistor operates at 18.9dB saturated gain, 48.7% saturated drain efficiency, and 38.7dBm saturated output power with a reference of 40V/20mA/3GHz. This power transistor is housed in an industry-standard 3mm x 3mm surface mount QFN-16 package. Typical applications include cellular infrastructure, radar, communications, and test instrumentation.