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onsemi ESDM1021 ESD Protection Diode

onsemi ESDM1021 ESD Protection Diode protects voltage-sensitive components from electrostatic discharge and transient voltage events. The ESDM1021 features low clamping voltage, low leakage, fast response, and low capacitance in a compact 01005 package measuring 0.445mm x 0.24mm x 0.18mm. The bidirectional device is designed for circuits with limited PCB space.

The onsemi ESDM1021 ESD Protection Diode delivers IEC 61000-4-2 Level 4 protection and withstands contact and air discharges up to ±30kV. The device has a working peak reverse voltage of 2V that supports 1.8V power-line and GPIO protection. Pb-free, halogen-free, BFR-free, and RoHS-compliant construction supports environmentally conscious electronic designs.

Features

  • Low clamping voltage for protecting voltage-sensitive components
  • Low capacitance for signal and power-line protection
  • Bidirectional configuration for positive and negative transient events
  • Low leakage current and fast response time
  • IEC 61000-4-2 Level 4 ESD protection
  • Compact 01005 package for space-constrained PCB designs
  • Pb-free, halogen-free, BFR-free, and RoHS-compliant construction

Applications

  • 1.8V power-line protection
  • GPIO protection
  • Low-voltage power-line protection
  • Voltage-sensitive component protection

Specifications

  • One bidirectional protection line
  • Working peak reverse voltage of 2.0V
  • Breakdown voltage range of 3.7V to 5.7V at 1mA
  • Typical breakdown voltage of 4.5V at 1mA
  • Maximum reverse leakage current of 100nA at 2.0V
  • Typical reverse leakage current of 1.0nA at 2.0V
  • ESD protection of ±30kV for contact and air discharge
  • Typical TLP clamping voltage
    • 4.9V at 8A
    • 5.4V at 16A
  • Reverse peak pulse current of 10A with an 8/20µs waveform
  • Maximum power dissipation of 313mW at 25°C
  • Clamping voltage with an 8/20µs waveform
    • 5.3V typical at 10A
    • 6.5V maximum at 10A
  • Dynamic resistance of 0.074Ω with a 100ns TLP pulse
  • Junction capacitance
    • 18pF typical at 0V and 1MHz
    • 23pF maximum at 0V and 1MHz
  • Junction-to-ambient thermal resistance of 400°C/W
  • Junction and storage temperature range of -55°C to +150°C
  • X4DFN-2 01005 package
  • Package dimensions of 0.445mm x 0.24mm x 0.18mm

TYPICAL CHARACTERISTICS

Performance Graph - onsemi ESDM1021 ESD Protection Diode

ESD Test Setup

Infographic - onsemi ESDM1021 ESD Protection Diode
Published: 2026-09-03 | Updated: 2026-09-14