Skip to Main Content

Part of the TTI Family of SpecialistsContact Mouser 0120-954-990Feedback

Change Location

0120-954-990 Change Location

In Stock

RoHS

Macnica - Tech Info

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

APTM120DA30CT1G

Microchip Technology

Mouser #:

494-APTM120DA30CT1G

Mfr. #:

APTM120DA30CT1G

Mfr.:

Microchip Technology

Description:

Discrete Semiconductor Modules PM-MOSFET-8-SBD-SP1

View in Development Tools Selector

Datasheet:

APTM120DA30CT1G Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	MOSFET-SBD Modules
Technology:	Si
Packaging:	Tube
Brand:	Microchip Technology
Product Type:	Discrete Semiconductor Modules
Factory Pack Quantity:	1
Subcategory:	Discrete Semiconductor Modules

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

APTM120DA30CT1G Datasheet (PDF)

DTS

View in Development Tools Selector

Errata

PCN

This functionality requires JavaScript to be enabled.

Compliance Codes

USHTS:: 8541590080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

MICROCHIP

MSCSM120x MOSFET Power Modules

Feature Si₃N₄ substrate with thick copper for improved thermal performance.

AgileSwitch® Phase Leg SiC MOSFET Power Modules

Silicon Carbide Power Modules featuring an extremely low inductance SP6LI package.

Silicon Carbide (SiC) Power Modules

Optimized for reliability, efficiency, low cost, space-saving, and reduced assembly time.

Silicon Carbide (SiC) Semiconductors

Offers a small footprint, high thermal conductivity, and zero reverse recovery charge.

Silicon Carbide (SiC) Schottky Barrier Diodes

Zero forward and reverse recovery charge for improved system efficiency.

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 12 Multiples: 1

Unit Price:

¥-

Ext. Price:

¥-

Est. Tariff:

This Product Ships FREE

Pricing (JPY)

Qty.	Unit Price	Ext. Price
	¥13,010.6	¥156,127
	¥13,004	¥325,100
	¥12,940.9	¥1,294,090
250	Quote