It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

MSCSM120AM03CT6LIAG

Name: Microchip MSCSM120AM03CT6LIAG
Brand: Microchip Technology
SKU: 494-SM120AM03CT6LIAG
Price: 161739 JPY
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser #:

494-SM120AM03CT6LIAG

Mfr. #:

MSCSM120AM03CT6LIAG

Mfr.:

Microchip Technology

Description:

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI

View in Development Tools Selector

Datasheet:

MSCSM120AM03CT6LIAG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Microchip Technology MSCSM120AM03CT6LIAG

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	MOSFET-SiC SBD Modules
Type:	MOSFET / SiC SBD
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	SMD/SMT
Package / Case:	SP6
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Brand:	Microchip Technology
Configuration:	Dual
Fall Time:	67 ns
Id - Continuous Drain Current:	805 A
Pd - Power Dissipation:	3.215 kW
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	3.1 mOhms
Rise Time:	55 ns
Factory Pack Quantity:	1
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	166 ns
Typical Turn-On Delay Time:	56 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	1.8 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MSCSM120AM03CT6LIAG Datasheet (PDF)

DTS

View in Development Tools Selector

PCN

This functionality requires JavaScript to be enabled.

Compliance Codes

USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

AgileSwitch® Phase Leg SiC MOSFET Power Modules

Microsemi / Microchip AgileSwitch® Phase Leg SiC (Silicon Carbide) MOSFET Power Modules are built with SiC MOSFETs and SiC Diodes and combine the advantages of both devices. These power modules feature an extremely low inductance SP6LI package with a maximum stray inductance of 3nH. These SP6LI power modules are offered in 1200V and 1700V variants with a case temperature (T_c) of +80°C. Offering higher power density and a compact form factor, the SP6LI package enables a lower quantity of modules in parallel to achieve complete systems, helping designers to downsize their equipment further.