PCDD0865G1_L2_00001

Name: Panjit PCDD0865G1_L2_00001
Brand: Panjit
SKU: 241-PCDD0865G1L20001
Price: 310 JPY
Availability: Discontinued

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Mouser #:

241-PCDD0865G1L20001

Mfr. #:

PCDD0865G1_L2_00001

Mfr.:

Panjit

Description:

SiC Schottky Diodes 650V SiC Schottky Barrier Diode

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

PCDD0865G1_L2_00001 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	TO-252AA-3
Configuration:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	480 A
Ir - Reverse Current:	3 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	SiC Gen.1
Packaging:	Reel
Brand:	Panjit
Pd - Power Dissipation:	83.3 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	3000
Subcategory:	Diodes & Rectifiers
Unit Weight:	321.700 mg

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Compliance Codes

USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.