QPD1003

Name: Qorvo QPD1003
Brand: Qorvo
SKU: 772-QPD1003
Price: 341490 JPY
Availability: OutOfStock

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Mouser #:

772-QPD1003

Mfr. #:

QPD1003

Mfr.:

Qorvo

Description:

GaN FETs 1.2-1.4GHz 500W 50V SSG 20dB GaN

Datasheet:

QPD1003 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	RF-565
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	15 A
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	370 W
Maximum Operating Frequency:	1.4 GHz
Minimum Operating Frequency:	1.2 GHz
Technology:	GaN
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1003PCB401
Gain:	19.9 dB
Moisture Sensitive:	Yes
Output Power:	540 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	QPD1003
Factory Pack Quantity:	18
Subcategory:	Transistors
Transistor Type:	HEMT
Vgs - Gate-Source Breakdown Voltage:	145 V
Part # Aliases:	1131389
Unit Weight:	104.655 g

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Datasheet

QPD1003 Datasheet (PDF)

PCN

Product Change Notification (PDF)

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Compliance Codes

JPHTS:: 854239099
CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8542390090
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.