PD57018-E

STMicroelectronics
511-PD57018-E
PD57018-E

Mfr.:

Description:
RF MOSFET Transistors POWER RF Transistor
Complete Your Design

Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
2.5 A
65 V
760 mOhms
1 GHz
16.5 dB
18 W
- 65 C
+ 150 C
SMD/SMT
PowerSO-10RF-Formed-4
LDMOS FET
Tube
Brand: STMicroelectronics
Forward Transconductance - Min: 1 S
Moisture Sensitive: Yes
Pd - Power Dissipation: 31.7 W
Product Type: RF MOSFETs
Series: PD57018-E
Factory Pack Quantity: 400
Subcategory: RF Transistors
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 20 V
Unit Weight: 3 g
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Attributes selected: 0

Compliance Codes
JPHTS:
854129000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

In Stock: 461

Stock:
461 Can Ship Immediately
Factory Lead-Time:
23 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥5,180.7 ¥5,181
¥3,793.7 ¥37,937
¥3,609.4 ¥360,940

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