STGP5H60DF

STMicroelectronics
511-STGP5H60DF
STGP5H60DF

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
10 A
88 W
- 55 C
+ 175 C
STGP5H60DF
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 2000
Subcategory: IGBTs
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
JPHTS:
854129000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

In Stock: 4,931

Stock:
4,931 Can Ship Immediately
Factory Lead-Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥347.1 ¥347
¥167.8 ¥1,678
¥149.7 ¥14,970
¥118.8 ¥59,400
¥108.6 ¥108,600
¥102.5 ¥205,000
¥96.7 ¥580,200