STGP7H60DF

STMicroelectronics
511-STGP7H60DF
STGP7H60DF

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, H series 600 V, 7 A high speed
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.95 V
- 20 V, 20 V
14 A
88 W
- 55 C
+ 175 C
STGP7H60DF
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 14 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 2000
Subcategory: IGBTs
Unit Weight: 6 g
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Attributes selected: 0

Compliance Codes
JPHTS:
8541210101
CNHTS:
8541290000
CAHTS:
8541210000
USHTS:
8541290065
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead-Time:
20 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥340.5 ¥341
¥163.3 ¥1,633
¥146 ¥14,600
¥115.4 ¥57,700
¥104.1 ¥104,100
¥95.2 ¥190,400
¥89.2 ¥356,800

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