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CSD23280F3T

Name: Texas Instruments CSD23280F3T
Brand: Texas Instruments
SKU: 595-CSD23280F3T
Price: 237 JPY
Availability: InStock

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Mouser #:

595-CSD23280F3T

Mfr. #:

CSD23280F3T

Mfr.:

Texas Instruments

Description:

MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3

Datasheet:

CSD23280F3T Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	1.8 A
Rds On - Drain-Source Resistance:	250 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	950 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	PicoStar
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	3 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	CSD23280F3
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	0.300 mg

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Datasheet

CSD23280F3T Datasheet

PCN

Product Change Notification (PDF)

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Compliance Codes

JPHTS:: 854110090
CNHTS:: 8541210000
CAHTS:: 8541100090
USHTS:: 8541210095
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.

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In Stock: 2,664

Stock:: 2,664 Can Ship Immediately

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Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+¥750)

Pricing (JPY)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	¥237.5	¥238
	¥111.6	¥1,116
	¥85.7	¥8,570
Full Reel (Order in multiples of 250)
	¥85.7	¥21,425
	¥72.9	¥36,450
	¥68.8	¥172,000
	¥61.1	¥305,500
	¥59	¥590,000
	¥51.8	¥1,295,000

† ¥750 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

CSD23280F3

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

¥60

Min:

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Mfr.:

Texas Instruments

Mfr. #:

CSD23280F3

Description:

MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3T

Compare With Current Part

CSD23280F3T

Mfr.: Texas Instruments

Description: MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3

Specifications

Documents (4)

Datasheet

PCN

SPICE Models

Environmental Documents

Product & Trade Compliance

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FemtoFET Power MOSFETs

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Mfr.:

Texas Instruments

Description:

MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3

FEATURED PRODUCTS

TEXAS INSTRUMENTS