BSM180C12P2E202

ROHM Semiconductor
755-BSM180C12P2E202
BSM180C12P2E202

Mfr.:

Description:
MOSFET Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02

Datasheet:
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Learn more about ROHM Semiconductor BSM180C12P2E202

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
Module
N-Channel
1 Channel
1.2 kV
204 A
- 6 V, + 22 V
1.6 V
- 40 C
+ 150 C
1.36 kW
BSMx
Tray
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 32 ns
Height: 15.4 mm
If - Forward Current: 180 A
Length: 152 mm
Product Type: MOSFET Modules
Rise Time: 36 ns
Factory Pack Quantity: 4
Subcategory: Discrete and Power Modules
Type: SiC Power Module
Typical Turn-Off Delay Time: 139 ns
Typical Turn-On Delay Time: 49 ns
Vf - Forward Voltage: 1.6 V
Vr - Reverse Voltage: 1.2 kV
Width: 62 mm
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Attributes selected: 0

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Compliance Codes
CNHTS:
8504409190
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

In Stock: 4

Stock:
4 Can Ship Immediately
Factory Lead-Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 4 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:
This Product Ships FREE

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥122,585.1 ¥122,585
¥115,547.5 ¥1,386,570

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