IS66WVE2M16EBLL-70BLI

Name: ISSI IS66WVE2M16EBLL-70BLI
Brand: ISSI
SKU: 870-66E2M16EBLL70BLI
Price: 1056 JPY
Availability: OutOfStock

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Mouser #:

870-66E2M16EBLL70BLI

Mfr. #:

IS66WVE2M16EBLL-70BLI

Mfr.:

ISSI

Description:

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS

Datasheet:

IS66WVE2M16EBLL-70BLI Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	SRAM
RoHS:
Memory Size:	32 Mbit
Organization:	2 M x 16
Access Time:	70 ns
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.7 V
Supply Current - Max:	30 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package / Case:	TFBGA-48
Brand:	ISSI
Memory Type:	SDR
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	IS66WVE2M16EBLL
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage
Type:	Asynchronous
Unit Weight:	86 mg

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Datasheet

IS66WVE2M16EBLL-70BLI Datasheet (PDF)

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Compliance Codes

JPHTS:: 854232021
CNHTS:: 8542329000
CAHTS:: 8542320020
USHTS:: 8542320002
KRHTS:: 8542321010
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.