STB40N60M2

STMicroelectronics
511-STB40N60M2
STB40N60M2

Mfr.:

Description:
MOSFETs N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
600 V
34 A
88 mOhms
25 V
3 V
57 nC
- 55 C
+ 150 C
250 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 11 ns
Product Type: MOSFETs
Rise Time: 13.5 ns
Series: STB40N60M2
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 96 ns
Typical Turn-On Delay Time: 20.5 ns
Unit Weight: 4 g
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Attributes selected: 0

Compliance Codes
JPHTS:
8541290100
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

In Stock: 934

Stock:
934
Can Ship Immediately
On Order:
1,000
Expected 1/29/2027
Factory Lead-Time:
24
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (JPY)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
¥1,046.4 ¥1,046
¥553.1 ¥5,531
¥504.9 ¥50,490
¥490 ¥245,000
Full Reel (Order in multiples of 1000)
¥438.5 ¥438,500
† ¥750 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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