TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Results: 37
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs INDUSTRY
Datasheet
156In Stock
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 275 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
5In Stock
720On Order
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 148 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
101In Stock
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.42 V - 20 V, 20 V 80 A 395 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs INDUSTRY
Datasheet
283In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 275 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS
Datasheet
960Expected 9/3/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 305 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs INDUSTRY
Datasheet
4,018On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 55 A 188 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS
Datasheet
1,200Expected 10/29/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 74 A 255 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 30 Weeks
MouseReel Available
Min.: 1
Mult.: 1
: 1,000

Si D2PAK-3 (TO-263-3) SMD/SMT Single 650 V 1.65 V - 20 V, 20 V 38 A 125 W - 40 C + 175 C Trenchstop IGBT5 Reel, Cut Tape, MouseReel
Infineon Technologies IGBTs HOME APPLIANCES
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 240
Mult.: 240

- 20 V, 20 V Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 240
Mult.: 240

Si Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 274 W - 40 C + 175 C Trenchstop IGBT5 S5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

- 20 V, 20 V Trenchstop IGBT5 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 240
Mult.: 240

Si TO-247-4 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 395 W - 40 C + 175 C Trenchstop IGBT5 Tube