NVNJWS1K6N061LTAG

onsemi
863-VNJWS1K6N061LTAG
NVNJWS1K6N061LTAG

Mfr.:

Description:
MOSFETs Mosfet - Power, N-Channel with ESD Protection,60V,853mA

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
XDFNW-3
N-Channel
1 Channel
60 V
853 mA
1.6 mOhms
20 V
2.5 V
900 pC
- 55 C
+ 175 C
2.617 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 32 ns
Forward Transconductance - Min: 0.48 S
Product Type: MOSFETs
Rise Time: 34 ns
Series: NVNJWS1K6N061L
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 22 ns
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Attributes selected: 0

Compliance Codes
JPHTS:
854129000
CAHTS:
8541290000
USHTS:
8541290065
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

NVNJWS1K6N061L N-Channel MOSFET

onsemi NVNJWS1K6N061L N-Channel MOSFET features low RDS(on) and low gate threshold with integrated ESD protection. This MOSFET offers a drain‑to‑source voltage of 60V, ±20V gate-to-source voltage, and 6.47A pulsed drain current. The NVNJWS1K6N061L MOSFET is AEC-Q101 qualified and PPAP capable, and is Pb-free. This MOSFET operates over the -55°C to +175°C temperature range. Typical applications include low-side load switches, DC-DC converters (buck and boost circuits), OBC, motor control, fan pumps, and LED lighting.

In Stock: 2,100

Stock:
2,100 Can Ship Immediately
Factory Lead-Time:
41 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 300
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥149.5 ¥150
¥106.3 ¥1,063
¥66.1 ¥6,610
Full Reel (Order in multiples of 3000)
¥66.1 ¥198,300